Abstract
We report on the binding energy and dephasing of localized biexciton states in narrow ZnSe multiple quantum wells. The measured binding-energy distribution of the localized biexcitons shows a width of 2.2 meV centered at 8.5 meV, and is fairly independent of the exciton localization energy. In four-wave mixing, the biexciton photon echo decays fast and nonexponentially. This behavior results from the inhomogeneous broadening of the biexciton binding energy, as we show by a comparison with an analytical model calculation. The fast decay is thus not related to a fast microscopic biexciton dephasing.
Original language | English |
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Journal | Physical Review B |
Volume | 55 |
Issue number | 12 |
Pages (from-to) | R7383-R7386 |
ISSN | 2469-9950 |
DOIs | |
Publication status | Published - 1997 |
Bibliographical note
Copyright (1997) American Physical Society.Keywords
- WELL STRUCTURES
- INTERFACES
- SEMICONDUCTOR QUANTUM DOTS
- EXCITONS