Binding-energy distribution and dephasing of localized biexcitons

Wolfgang Werner Langbein, Jørn Märcher Hvam, M. Umlauff, H. Kalt, B. Jobst, D. Hommel

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    Abstract

    We report on the binding energy and dephasing of localized biexciton states in narrow ZnSe multiple quantum wells. The measured binding-energy distribution of the localized biexcitons shows a width of 2.2 meV centered at 8.5 meV, and is fairly independent of the exciton localization energy. In four-wave mixing, the biexciton photon echo decays fast and nonexponentially. This behavior results from the inhomogeneous broadening of the biexciton binding energy, as we show by a comparison with an analytical model calculation. The fast decay is thus not related to a fast microscopic biexciton dephasing.
    Original languageEnglish
    JournalPhysical Review B
    Volume55
    Issue number12
    Pages (from-to)R7383-R7386
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Physical Society.

    Keywords

    • WELL STRUCTURES
    • INTERFACES
    • SEMICONDUCTOR QUANTUM DOTS
    • EXCITONS

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