Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

Erik Vesterlund Pedersen; Flemming Jensen; Sergey Y. Shiryaev; Jon Wulff Petersen; J. Lundsgaard Hansen; A. Nylandsted Larsen

Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

Erik Vesterlund Pedersen, Flemming Jensen, Sergey Y. Shiryaev, Jon Wulff Petersen, J. Lundsgaard Hansen, A. Nylandsted Larsen

Aarhus University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We have investigated the size distribution of germanium islands deposited onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and consisted of one group of smaller 'pyramidal' islands with a broad distribution of diameters and heights and another group of larger 'spherical' islands with a narrow distribution of diameters and heights. Both the size of the islands and the critical size for the change-over between the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality, we have conducted experiments where the amount of material and the temperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.

Original language	English
Journal	Thin Solid Films
Volume	321
Issue number	1
Pages (from-to)	92-97
ISSN	0040-6090
Publication status	Published - 1998

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@article{a971471515dc40e58cd27a849e434609,

title = "Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates",

abstract = "We have investigated the size distribution of germanium islands deposited onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and consisted of one group of smaller 'pyramidal' islands with a broad distribution of diameters and heights and another group of larger 'spherical' islands with a narrow distribution of diameters and heights. Both the size of the islands and the critical size for the change-over between the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality, we have conducted experiments where the amount of material and the temperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.",

author = "Pedersen, {Erik Vesterlund} and Flemming Jensen and Shiryaev, {Sergey Y.} and Petersen, {Jon Wulff} and {Lundsgaard Hansen}, J. and {Nylandsted Larsen}, A.",

year = "1998",

language = "English",

volume = "321",

pages = "92--97",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

AU - Pedersen, Erik Vesterlund

AU - Jensen, Flemming

AU - Shiryaev, Sergey Y.

AU - Petersen, Jon Wulff

AU - Lundsgaard Hansen, J.

AU - Nylandsted Larsen, A.

PY - 1998

Y1 - 1998

N2 - We have investigated the size distribution of germanium islands deposited onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and consisted of one group of smaller 'pyramidal' islands with a broad distribution of diameters and heights and another group of larger 'spherical' islands with a narrow distribution of diameters and heights. Both the size of the islands and the critical size for the change-over between the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality, we have conducted experiments where the amount of material and the temperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.

AB - We have investigated the size distribution of germanium islands deposited onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and consisted of one group of smaller 'pyramidal' islands with a broad distribution of diameters and heights and another group of larger 'spherical' islands with a narrow distribution of diameters and heights. Both the size of the islands and the critical size for the change-over between the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality, we have conducted experiments where the amount of material and the temperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.

M3 - Journal article

VL - 321

SP - 92

EP - 97

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -

Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

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