Biexciton dephasing in a semiconductor microcavity

P. Borri, W. Langbein, U. Woggon, Jacob Riis Jensen, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The experimental observation of biexcitons in microcavities has been addressed recently. A well-resolved polariton-biexciton transition was observed in a high-quality GaAs single quantum well (QW) /spl lambda/-microcavity of 25 nm well width using a pump-probe experiment. In this microcavity the heavy-hole (HH) vacuum Rabi splitting is 3.6 meV, more than three times larger than the biexciton binding energy in the bare QW (1.1 meV). Due to the narrow linewidth of the polariton resonances, a well-resolved pump-induced optical absorption associated with biexcitons was observed. In this work we investigate the coherent properties of the biexciton in the same structure using a two-beam four-wave mixing (FWM) experiment at 10 K.
Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, 2001. Technical Digest
PublisherOpt. Soc. America
Publication date2001
ISBN (Print)15-57-52663-x
Publication statusPublished - 2001
Event2001 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 6 May 200110 May 2001
http://www.opticsinfobase.org/search.cfm?meetingid=19&year=2001

Conference

Conference2001 Quantum Electronics and Laser Science Conference
CountryUnited States
CityBaltimore, MD
Period06/05/200110/05/2001
Internet address

Cite this

Borri, P., Langbein, W., Woggon, U., Jensen, J. R., & Hvam, J. M. (2001). Biexciton dephasing in a semiconductor microcavity. In Quantum Electronics and Laser Science Conference, 2001. Technical Digest Opt. Soc. America. http://xplimage.ieee.org.globalproxy.cvt.dk:2048/iel5/7616/20763/00961977.pdf