Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

Jonatan Kutchinsky, Rafael Jozef Taboryski, Jørn Bindslev Hansen, Morten Wildt, Claus B. Sørensen, Poul Erik Lindelof

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude
Original languageEnglish
JournalI E E E Transactions on Applied Superconductivity
Volume9
Issue number2
Pages (from-to)4249-4252
ISSN1051-8223
Publication statusPublished - 1999
Event1998 Applied Superconductivity Conference - Palm Desert, CA, United States
Duration: 13 Sep 199818 Sep 1998

Conference

Conference1998 Applied Superconductivity Conference
CountryUnited States
CityPalm Desert, CA
Period13/09/199818/09/1998

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