Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS)
                interferometer

Jonatan Kutchinsky; Rafael Jozef Taboryski; Jørn Bindslev Hansen; Morten Wildt; Claus B. Sørensen; Poul Erik Lindelof

Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

Jonatan Kutchinsky, Rafael Jozef Taboryski, Jørn Bindslev Hansen, Morten Wildt, Claus B. Sørensen, Poul Erik Lindelof

Department of Physics

University of Copenhagen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude

Original language	English
Journal	I E E E Transactions on Applied Superconductivity
Volume	9
Issue number	2
Pages (from-to)	4249-4252
ISSN	1051-8223
Publication status	Published - 1999
Event	1998 Applied Superconductivity Conference - Palm Desert, CA, United States Duration: 13 Sept 1998 → 18 Sept 1998

Conference

Conference	1998 Applied Superconductivity Conference
Country/Territory	United States
City	Palm Desert, CA
Period	13/09/1998 → 18/09/1998

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Cite this

@article{f4ea9e6ea7d247a6976a00eeabbfda0d,

title = "Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer",

abstract = "We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude",

author = "Jonatan Kutchinsky and Taboryski, {Rafael Jozef} and Hansen, {J{\o}rn Bindslev} and Morten Wildt and S{\o}rensen, {Claus B.} and Lindelof, {Poul Erik}",

year = "1999",

language = "English",

volume = "9",

pages = "4249--4252",

journal = "I E E E Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

note = "1998 Applied Superconductivity Conference, ASC-98 ; Conference date: 13-09-1998 Through 18-09-1998",

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TY - JOUR

T1 - Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

AU - Kutchinsky, Jonatan

AU - Taboryski, Rafael Jozef

AU - Hansen, Jørn Bindslev

AU - Wildt, Morten

AU - Sørensen, Claus B.

AU - Lindelof, Poul Erik

PY - 1999

Y1 - 1999

N2 - We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude

AB - We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero bias voltage the fabricated interferometers typically exhibit 3% sinusoidal modulation of the conductance as a function of a magnetic field applied perpendicular to the loop. The conductance modulation is caused by resonant Andreev states in the normal GaAs region of the device. With increasing bias voltage of the order of a few microvolts the device is driven out of resonance and the conductance oscillations are extinguished. However, at higher bias voltage corresponding to the superconducting energy gap of Al (178 mu V) the conductance oscillations reappear but with reduced amplitude

M3 - Journal article

SN - 1051-8223

VL - 9

SP - 4249

EP - 4252

JO - I E E E Transactions on Applied Superconductivity

JF - I E E E Transactions on Applied Superconductivity

IS - 2

T2 - 1998 Applied Superconductivity Conference

Y2 - 13 September 1998 through 18 September 1998

ER -