Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO3 : Nb (x=0.65-1)

W. M.  Lu; J. R. Sun; D. J.  Wang; Y. W.  Xie; S.  Liang; Yunzhong Chen; B. G. Shen

doi:10.1063/1.3021399

Bias-dependent rectifying properties of n-n manganite heterojunctions La_1-xCa_xMnO₃/SrTiO₃: Nb (x=0.65-1)

W. M. Lu
, J. R. Sun
, D. J. Wang
, Y. W. Xie
, S. Liang
, Yunzhong Chen
, B. G. Shen

Chinese Academy of Sciences

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

The transport property of n-n type manganite heterojunctions, composed of La_1−xCa_xMnO₃ films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO₃, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.

Original language	English
Article number	212502
Journal	Applied Physics Letters
Volume	93
Issue number	21
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3021399
Publication status	Published - 2008
Externally published	Yes

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@article{2492aab4b5e142bebe6d1e6651832fc1,

title = "Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO3 : Nb (x=0.65-1)",

abstract = "The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt \% Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.",

author = "Lu, \{W. M.\} and Sun, \{J. R.\} and Wang, \{D. J.\} and Xie, \{Y. W.\} and S. Liang and Yunzhong Chen and Shen, \{B. G.\}",

year = "2008",

doi = "10.1063/1.3021399",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO3 : Nb (x=0.65-1)

AU - Lu, W. M.

AU - Sun, J. R.

AU - Wang, D. J.

AU - Xie, Y. W.

AU - Liang, S.

AU - Chen, Yunzhong

AU - Shen, B. G.

PY - 2008

Y1 - 2008

N2 - The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.

AB - The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.

U2 - 10.1063/1.3021399

DO - 10.1063/1.3021399

M3 - Journal article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212502

ER -

Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO3 : Nb (x=0.65-1)

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Bias-dependent rectifying properties of n-n manganite heterojunctions La_1-xCa_xMnO₃/SrTiO₃: Nb (x=0.65-1)