Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO: Nb (x=0.65-1)

W. M. Lu, J. R. Sun, D. J. Wang, Y. W. Xie, S. Liang, Yunzhong Chen, B. G. Shen

Research output: Contribution to journalJournal articleResearchpeer-review

75 Downloads (Pure)

Abstract

The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.
Original languageEnglish
Article number212502
JournalApplied Physics Letters
Volume93
Issue number21
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint

Dive into the research topics of 'Bias-dependent rectifying properties of n-n manganite heterojunctions La1-xCaxMnO3/SrTiO: Nb (x=0.65-1)'. Together they form a unique fingerprint.

Cite this