Abstract
The transport property of n-n type manganite heterojunctions, composed of La1−xCaxMnO3 films (x=0.6, 0.75, 0.85, and 1) and 0.05 wt % Nb-doped SrTiO3, has been experimentally studied. Different from p-n junctions, the rectifying behavior of which is either thermionic emission/diffusion-dominated or tunneling-dominated; the electronic process in the n-n junction undergoes a nonthermal to thermal transition as bias voltage increases, which is a feature emerging when Ca content exceeds x=0.75 and developing with the increase in x. The two processes can be well described by the Shockley equation and the Newman equation, respectively. Possible mechanisms for this phenomenon are discussed.
Original language | English |
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Article number | 212502 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 21 |
Number of pages | 3 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |