Bending‐induced strain and curvature effects on semiconductor nanowire electronic eigenstates

Morten Willatzen, B. Lassen

Research output: Contribution to journalConference articleResearchpeer-review


The combined influence of strain and geometry bending is analyzed quasi‐analytically for nanostructures using differential geometry arguments. Appropriate general coordinates u1, u2, u3 are chosen with u1 along the nanowire centerline and u2, u3 locally spanning the nanowire cross section. This choice allows us to assume, for large aspect‐ratio nanotructures, that terms proportional to u2, u3 or higher powers including combinations of u2, u3 are negligible. This assumption has been justified for nanostructures where the nanostructure radius is up to 10% of the local radius‐of‐curvature according to previous works. We show that the influence of bending‐induced strains may lead to substantial electronic eigenstate and associated energy eigenvalue changes in the case of circular‐bent nanowires (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Original languageEnglish
JournalPhysica Status Solidi. C: Current Topics in Solid State Physics
Issue number2
Pages (from-to)368-371
Publication statusPublished - 2011
Externally publishedYes
Event37th International Symposium on Compound Semiconductors (ISCS) - , Japan
Duration: 31 May 20104 Jun 2010
Conference number: 37


Conference37th International Symposium on Compound Semiconductors (ISCS)


  • Quantum wire structures
  • Differential geometry
  • Bending
  • Eigenstates


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