Beamwidth for asymmetric and multilayer semiconductor laser structures

Jens Buus

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    An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.
    Original languageEnglish
    JournalI E E E Journal of Quantum Electronics
    Issue number5
    Pages (from-to)732-736
    Publication statusPublished - 1981

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    Copyright: 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE


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