Beamwidth for asymmetric and multilayer semiconductor laser structures

Jens Buus

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Abstract

An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.
Original languageEnglish
JournalI E E E Journal of Quantum Electronics
Volume17
Issue number5
Pages (from-to)732-736
ISSN0018-9197
DOIs
Publication statusPublished - 1981

Bibliographical note

Copyright: 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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