Beamwidth for asymmetric and multilayer semiconductor laser structures

Jens Buus

doi:10.1109/JQE.1981.1071157

Beamwidth for asymmetric and multilayer semiconductor laser structures

Jens Buus

Technical University of Denmark

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Abstract

An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.

Original language	English
Journal	I E E E Journal of Quantum Electronics
Volume	17
Issue number	5
Pages (from-to)	732-736
ISSN	0018-9197
DOIs	https://doi.org/10.1109/JQE.1981.1071157
Publication status	Published - 1981

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Copyright: 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@article{1fa86d5118a7432d99998f826823ef47,

title = "Beamwidth for asymmetric and multilayer semiconductor laser structures",

abstract = "An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.",

author = "Jens Buus",

note = "Copyright: 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

year = "1981",

doi = "10.1109/JQE.1981.1071157",

language = "English",

volume = "17",

pages = "732--736",

journal = "I E E E Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers",

number = "5",

}

TY - JOUR

T1 - Beamwidth for asymmetric and multilayer semiconductor laser structures

AU - Buus, Jens

N1 - Copyright: 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1981

Y1 - 1981

N2 - An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.

AB - An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.

U2 - 10.1109/JQE.1981.1071157

DO - 10.1109/JQE.1981.1071157

M3 - Journal article

SN - 0018-9197

VL - 17

SP - 732

EP - 736

JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

IS - 5

ER -

Beamwidth for asymmetric and multilayer semiconductor laser structures

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