Batch Processing of CMOS Compatible Feedthroughs

F.E. Rasmussen, M. Heschel, Ole Hansen

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    This paper presents a technique for batch fabrication of electrical feedthroughs in CMOS wafers. The presented process is designed with specific attention on industrial applicability. The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes. Hence, the process scheme allows for post processing of feedthroughs in any kind of fully processed CMOS wafer. The fabrication of the electrical feedthroughs is based on wet etching of through-holes, low temperature deposition of dielectric material, and electrodeposition of photoresist and feedthrough metal. The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    JournalMicroelectronic Engineering
    Volume67-68
    Pages (from-to)487-494
    ISSN0167-9317
    DOIs
    Publication statusPublished - Jun 2003
    Event28th International Conference on Micro- and Nano-Engineering - Lugano, Switzerland
    Duration: 16 Sep 200219 Sep 2002
    Conference number: 28

    Conference

    Conference28th International Conference on Micro- and Nano-Engineering
    Number28
    CountrySwitzerland
    CityLugano
    Period16/09/200219/09/2002

    Keywords

    • electrical feedthrough
    • CMOS compatible
    • batch processing
    • electrodeposited photoresist
    • KOH resistant PECVD nitride

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