Abstract
Previous attempts to tune the electrical properties of large-scale graphene via nanopatterning have led to serious degradation of the key electrical parameters that make graphene a desirable material for electronic devices. We use thermal nanoimprint lithography to pattern wafer-scale graphene on a 4-in. wafer with prefabricated 25mm2 devices. The nanopatterning process introduces a modest
decrease in carrier mobility and only a minor change in residual doping. Due to the rapid fabrication time of approximately 90 min per wafer, this method has potential for large-scale industrial production. The chemiresistive gas sensing response towards NO2 was assessed in humid synthetic air and dry air, with devices showing a response to 50 ppb of NO2 only when nanopatterned.
decrease in carrier mobility and only a minor change in residual doping. Due to the rapid fabrication time of approximately 90 min per wafer, this method has potential for large-scale industrial production. The chemiresistive gas sensing response towards NO2 was assessed in humid synthetic air and dry air, with devices showing a response to 50 ppb of NO2 only when nanopatterned.
Original language | English |
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Article number | 193103 |
Journal | Applied Physics Letters |
Volume | 111 |
Number of pages | 5 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2017 |