Band-mixing and strain effects in InAs/GaAs quantum rings

B. Lassen; Morten Willatzen; D. Barettin

doi:10.1016/j.spmi.2009.08.005

Band-mixing and strain effects in InAs/GaAs quantum rings

B. Lassen
, Morten Willatzen
, D. Barettin

University of Southern Denmark

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

Original language	English
Journal	Superlattices and Microstructures
Volume	47
Issue number	1
Pages (from-to)	103-107
ISSN	0749-6036
DOIs	https://doi.org/10.1016/j.spmi.2009.08.005
Publication status	Published - 2010
Externally published	Yes
Event	9^th International Conference on Physics of Light-Matter Coupling in Nanostructures - Lecce , Italy Duration: 16 Apr 2009 → 20 Apr 2009 Conference number: 9

Conference

Conference	9^th International Conference on Physics of Light-Matter Coupling in Nanostructures
Number	9
Country/Territory	Italy
City	Lecce
Period	16/04/2009 → 20/04/2009

Keywords

Semiconductors
Confined systems
Quantum rings
Band-mixing
Strain and piezoelectric effects
Absorption

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10.1016/j.spmi.2009.08.005

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title = "Band-mixing and strain effects in InAs/GaAs quantum rings",

abstract = "We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.",

keywords = "Semiconductors, Confined systems, Quantum rings, Band-mixing, Strain and piezoelectric effects, Absorption",

author = "B. Lassen and Morten Willatzen and D. Barettin",

year = "2010",

doi = "10.1016/j.spmi.2009.08.005",

language = "English",

volume = "47",

pages = "103--107",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press",

number = "1",

note = "9th International Conference on Physics of Light-Matter Coupling in Nanostructures , PLMCN9 ; Conference date: 16-04-2009 Through 20-04-2009",

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TY - GEN

T1 - Band-mixing and strain effects in InAs/GaAs quantum rings

AU - Lassen, B.

AU - Willatzen, Morten

AU - Barettin, D.

N1 - Conference code: 9

PY - 2010

Y1 - 2010

N2 - We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

AB - We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

KW - Semiconductors

KW - Confined systems

KW - Quantum rings

KW - Band-mixing

KW - Strain and piezoelectric effects

KW - Absorption

U2 - 10.1016/j.spmi.2009.08.005

DO - 10.1016/j.spmi.2009.08.005

M3 - Conference article

SN - 0749-6036

VL - 47

SP - 103

EP - 107

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

T2 - 9th International Conference on Physics of Light-Matter Coupling in Nanostructures

Y2 - 16 April 2009 through 20 April 2009

ER -

Band-mixing and strain effects in InAs/GaAs quantum rings

Abstract

Conference

Keywords

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