Abstract
We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.
Original language | English |
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Journal | Superlattices and Microstructures |
Volume | 47 |
Issue number | 1 |
Pages (from-to) | 103-107 |
ISSN | 0749-6036 |
DOIs | |
Publication status | Published - 2010 |
Externally published | Yes |
Event | 9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009) - Lecce , Italy Duration: 1 Jan 2009 → … Conference number: 9 |
Conference
Conference | 9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009) |
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Number | 9 |
Country/Territory | Italy |
City | Lecce |
Period | 01/01/2009 → … |
Keywords
- Semiconductors
- Confined systems
- Quantum rings
- Band-mixing
- Strain and piezoelectric effects
- Absorption