Band-mixing and strain effects in InAs/GaAs quantum rings

B. Lassen, Morten Willatzen, D. Barettin

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.
Original languageEnglish
JournalSuperlattices and Microstructures
Volume47
Issue number1
Pages (from-to)103-107
ISSN0749-6036
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009) - Lecce , Italy
Duration: 1 Jan 2009 → …
Conference number: 9

Conference

Conference9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009)
Number9
Country/TerritoryItaly
CityLecce
Period01/01/2009 → …

Keywords

  • Semiconductors
  • Confined systems
  • Quantum rings
  • Band-mixing
  • Strain and piezoelectric effects
  • Absorption

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