Band-mixing and strain effects in InAs/GaAs quantum rings

B. Lassen; Morten Willatzen; D. Barettin

doi:10.1016/j.spmi.2009.08.005

Band-mixing and strain effects in InAs/GaAs quantum rings

B. Lassen, Morten Willatzen, D. Barettin

University of Southern Denmark

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

Original language	English
Journal	Superlattices and Microstructures
Volume	47
Issue number	1
Pages (from-to)	103-107
ISSN	0749-6036
DOIs	https://doi.org/10.1016/j.spmi.2009.08.005
Publication status	Published - 2010
Externally published	Yes
Event	9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009) - Lecce , Italy Duration: 1 Jan 2009 → … Conference number: 9

Conference

Conference	9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009)
Number	9
Country/Territory	Italy
City	Lecce
Period	01/01/2009 → …

Keywords

Semiconductors
Confined systems
Quantum rings
Band-mixing
Strain and piezoelectric effects
Absorption

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10.1016/j.spmi.2009.08.005

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title = "Band-mixing and strain effects in InAs/GaAs quantum rings",

abstract = "We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.",

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AU - Lassen, B.

AU - Willatzen, Morten

AU - Barettin, D.

N1 - Conference code: 9

PY - 2010

Y1 - 2010

N2 - We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

AB - We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly.

KW - Semiconductors

KW - Confined systems

KW - Quantum rings

KW - Band-mixing

KW - Strain and piezoelectric effects

KW - Absorption

U2 - 10.1016/j.spmi.2009.08.005

DO - 10.1016/j.spmi.2009.08.005

M3 - Conference article

VL - 47

SP - 103

EP - 107

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1

T2 - 9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2009)

Y2 - 1 January 2009

ER -

Band-mixing and strain effects in InAs/GaAs quantum rings

Abstract

Conference

Keywords

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