Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

Tom Keinicke Johansen, Al-Sawaf Thualfiqar, Nils Weimann, Wolfgang Heinrich, Viktor Krozer

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.
    Original languageEnglish
    Title of host publicationProceedings of 2016 11th European Microwave Integrated Circuits Conference
    PublisherIEEE
    Publication date2016
    Pages89-92
    ISBN (Print)9782874870446
    DOIs
    Publication statusPublished - 2016
    Event11th European Microwave Integrated Circuit Conference - Nuremberg, Germany
    Duration: 3 Oct 20164 Oct 2016
    Conference number: 11
    https://ieeexplore.ieee.org/xpl/conhome/7764428/proceeding

    Conference

    Conference11th European Microwave Integrated Circuit Conference
    Number11
    Country/TerritoryGermany
    CityNuremberg
    Period03/10/201604/10/2016
    Internet address

    Keywords

    • Transferred substrate
    • Frequency doublers
    • G-band
    • Heterojunction bipolar transistor (HBT)
    • Millimeter-wave monolithic integrated circuits
    • InP

    Fingerprint

    Dive into the research topics of 'Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology'. Together they form a unique fingerprint.

    Cite this