Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

Tom Keinicke Johansen; Al-Sawaf Thualfiqar; Nils Weimann; Wolfgang Heinrich; Viktor Krozer

doi:10.1109/EuMIC.2016.7777497

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

Tom Keinicke Johansen, Al-Sawaf Thualfiqar, Nils Weimann, Wolfgang Heinrich, Viktor Krozer

Leibniz-Institut für Höchstfrequenztechnik

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.

Original language	English
Title of host publication	Proceedings of 2016 11th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2016
Pages	89-92
ISBN (Print)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777497
Publication status	Published - 2016
Event	11th European Microwave Integrated Circuit Conference - Nuremberg, Germany Duration: 3 Oct 2016 → 4 Oct 2016 Conference number: 11 https://ieeexplore.ieee.org/xpl/conhome/7764428/proceeding

Conference

Conference	11th European Microwave Integrated Circuit Conference
Number	11
Country/Territory	Germany
City	Nuremberg
Period	03/10/2016 → 04/10/2016
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7764428/proceeding

Keywords

Transferred substrate
Frequency doublers
G-band
Heterojunction bipolar transistor (HBT)
Millimeter-wave monolithic integrated circuits
InP

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10.1109/EuMIC.2016.7777497

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title = "Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology",

abstract = "In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.",

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Johansen, TK, Thualfiqar, A-S, Weimann, N, Heinrich, W & Krozer, V 2016, Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology. in Proceedings of 2016 11th European Microwave Integrated Circuits Conference. IEEE, pp. 89-92, 11th European Microwave Integrated Circuit Conference, Nuremberg, Bavaria, Germany, 03/10/2016. https://doi.org/10.1109/EuMIC.2016.7777497

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology. / Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils et al.
Proceedings of 2016 11th European Microwave Integrated Circuits Conference. IEEE, 2016. p. 89-92.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Weimann, Nils

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

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N2 - In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.

AB - In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output. The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 dBm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz.

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KW - G-band

KW - Heterojunction bipolar transistor (HBT)

KW - Millimeter-wave monolithic integrated circuits

KW - InP

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BT - Proceedings of 2016 11th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 11th European Microwave Integrated Circuit Conference

Y2 - 3 October 2016 through 4 October 2016

ER -

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

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