Avoiding blistering in Al2O3 deposited on planar and black Si

Beniamino Iandolo*, Rasmus S. Davidsen, Ole Hansen

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Aluminum oxide (Al2O3) fabricated by atomic layer deposition (ALD) has during the last decade emerged as an excellent surface passivation material for both planar and micro/nanostructured silicon. The post-ALD thermal treatment required to activate the surface passivation of Al2O3 results often in blistering and film delamination. Here, we studied how several fabrication steps affect blistering and the quality of surface passivation by Al2O3. Decreasing the fraction of blistered area on planar Si surfaces results in lower surface recombination velocity, in agreement with previous reports. By using simple analytical expressions, we estimated that surface recombination is at least 20 times faster at the blisters than at the non-blistered areas. Exposing the Si surface to a reactive ion etch (RIE) treatment as short as 30 s is enough to suppress blistering. Anti-reflective nanostructured Si (black Si) fabricated using the same RIE process by increasing the RIE time does not suffer from blistering either. Finally, we investigated the effective lifetime of black Si textured surfaces and we implemented a pre-ALD conditioning routine that dramatically improves the quality of passivation by Al2O3 on black Si.
    Original languageEnglish
    JournalSolar Energy Materials and Solar Cells
    Volume187
    Pages (from-to)23-29
    ISSN0927-0248
    DOIs
    Publication statusPublished - 2018

    Keywords

    • Surface passivation
    • Al2O3
    • Blistering
    • Black silicon

    Cite this

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    title = "Avoiding blistering in Al2O3 deposited on planar and black Si",
    abstract = "Aluminum oxide (Al2O3) fabricated by atomic layer deposition (ALD) has during the last decade emerged as an excellent surface passivation material for both planar and micro/nanostructured silicon. The post-ALD thermal treatment required to activate the surface passivation of Al2O3 results often in blistering and film delamination. Here, we studied how several fabrication steps affect blistering and the quality of surface passivation by Al2O3. Decreasing the fraction of blistered area on planar Si surfaces results in lower surface recombination velocity, in agreement with previous reports. By using simple analytical expressions, we estimated that surface recombination is at least 20 times faster at the blisters than at the non-blistered areas. Exposing the Si surface to a reactive ion etch (RIE) treatment as short as 30 s is enough to suppress blistering. Anti-reflective nanostructured Si (black Si) fabricated using the same RIE process by increasing the RIE time does not suffer from blistering either. Finally, we investigated the effective lifetime of black Si textured surfaces and we implemented a pre-ALD conditioning routine that dramatically improves the quality of passivation by Al2O3 on black Si.",
    keywords = "Surface passivation, Al2O3, Blistering, Black silicon",
    author = "Beniamino Iandolo and Davidsen, {Rasmus S.} and Ole Hansen",
    year = "2018",
    doi = "10.1016/j.solmat.2018.07.014",
    language = "English",
    volume = "187",
    pages = "23--29",
    journal = "Solar Energy Materials & Solar Cells",
    issn = "0927-0248",
    publisher = "Elsevier",

    }

    Avoiding blistering in Al2O3 deposited on planar and black Si. / Iandolo, Beniamino; Davidsen, Rasmus S.; Hansen, Ole.

    In: Solar Energy Materials and Solar Cells, Vol. 187, 2018, p. 23-29.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Avoiding blistering in Al2O3 deposited on planar and black Si

    AU - Iandolo, Beniamino

    AU - Davidsen, Rasmus S.

    AU - Hansen, Ole

    PY - 2018

    Y1 - 2018

    N2 - Aluminum oxide (Al2O3) fabricated by atomic layer deposition (ALD) has during the last decade emerged as an excellent surface passivation material for both planar and micro/nanostructured silicon. The post-ALD thermal treatment required to activate the surface passivation of Al2O3 results often in blistering and film delamination. Here, we studied how several fabrication steps affect blistering and the quality of surface passivation by Al2O3. Decreasing the fraction of blistered area on planar Si surfaces results in lower surface recombination velocity, in agreement with previous reports. By using simple analytical expressions, we estimated that surface recombination is at least 20 times faster at the blisters than at the non-blistered areas. Exposing the Si surface to a reactive ion etch (RIE) treatment as short as 30 s is enough to suppress blistering. Anti-reflective nanostructured Si (black Si) fabricated using the same RIE process by increasing the RIE time does not suffer from blistering either. Finally, we investigated the effective lifetime of black Si textured surfaces and we implemented a pre-ALD conditioning routine that dramatically improves the quality of passivation by Al2O3 on black Si.

    AB - Aluminum oxide (Al2O3) fabricated by atomic layer deposition (ALD) has during the last decade emerged as an excellent surface passivation material for both planar and micro/nanostructured silicon. The post-ALD thermal treatment required to activate the surface passivation of Al2O3 results often in blistering and film delamination. Here, we studied how several fabrication steps affect blistering and the quality of surface passivation by Al2O3. Decreasing the fraction of blistered area on planar Si surfaces results in lower surface recombination velocity, in agreement with previous reports. By using simple analytical expressions, we estimated that surface recombination is at least 20 times faster at the blisters than at the non-blistered areas. Exposing the Si surface to a reactive ion etch (RIE) treatment as short as 30 s is enough to suppress blistering. Anti-reflective nanostructured Si (black Si) fabricated using the same RIE process by increasing the RIE time does not suffer from blistering either. Finally, we investigated the effective lifetime of black Si textured surfaces and we implemented a pre-ALD conditioning routine that dramatically improves the quality of passivation by Al2O3 on black Si.

    KW - Surface passivation

    KW - Al2O3

    KW - Blistering

    KW - Black silicon

    U2 - 10.1016/j.solmat.2018.07.014

    DO - 10.1016/j.solmat.2018.07.014

    M3 - Journal article

    VL - 187

    SP - 23

    EP - 29

    JO - Solar Energy Materials & Solar Cells

    JF - Solar Energy Materials & Solar Cells

    SN - 0927-0248

    ER -