Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure and microhardness has been extensively reported. Furthermore, the effects of thermal aging on the microstructure and its corresponding microhardness of these promising candidate alloys have been investigated in this work. After thermal aging at 200°C for different durations ranging from 1 day to 3 weeks, the microstructure varied a lot in morphology in the case of both Au-Ge-Sb and Au-Ge-Sn candidate alloys. Surprisingly, the microstructure remained relatively stable even after long term thermal aging in the case of Au-Ge-In candidate alloy. The microhardness measurement is well correlated with the solubility and reactivity of these alloying elements, characteristics of their intermetallic compounds (IMCs) and the distribution of phases. The primary strengthening mechanism in the case of Au-Ge-In and Au-Ge-Sn combinations was determined to be the classic solute atom strengthening. The Au-Ge-Sb combination was primarily strengthened by the refined (Ge) dispersed phase. The distribution of phases played a relatively more crucial role in determining the ductility of the bulk solder alloy. In the present work it was found that among the low melting point metals, the addition of Sb to the Au-Ge eutectic would not only decrease its melting point but also would improve its ductility substantially.
|Title of host publication||2009 International Symposium on Microelectronics|
|Publisher||International Microelectronics and packaging Society|
|Publication status||Published - 2009|
|Event||42nd International Symposium on Microelectronics: Bringing Together The Entire Microelectronics Supply Chain! - San Jose, United States|
Duration: 1 Nov 2009 → 5 Nov 2009
Conference number: 42
|Conference||42nd International Symposium on Microelectronics|
|Period||01/11/2009 → 05/11/2009|
Chidambaram, V., Hald, J., & Hattel, J. H. (2009). Au-Ge based Candidate Alloys for High-Temperature Lead-Free Solder Alternatives. In 2009 International Symposium on Microelectronics (pp. 000338-000345). International Microelectronics and packaging Society.