Indium (In) doped MgB2 polycrystalline samples were prepared by solid-liquid phase reaction in Ar. After reaction at 800 °C, less than 1 at.% Mg was replaced by In in the MgB2 phase, without significant influence on its lattice parameters and only a slight decrease of its superconducting transition temperature. For all studied In concentrations in the nominal composition, the formation of InMg was evidenced by X-ray diffraction. The critical current density and accommodation field of the wires are decreased in the samples containing In. The flux pinning mechanism can be described by surface pinning in both the doped and undoped samples.