Atomistic simulations of dislocation processes in copper

T. Vegge, K.W. Jacobsen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We discuss atomistic simulations of dislocation processes in copper based on effective medium theory interatomic potentials. Results on screw dislocation structures and processes are reviewed with particular focus on point defect mobilities and processes involving cross slip. For example, the stability of screw dislocation dipoles is discussed. We show that the presence of jogs will strongly influence cross slip barriers and dipole stability. We furthermore present some new results on jogged edge dislocations and edge dislocation dipoles. The jogs are found to be extended, and simulations of vacancy controlled climb show the jogs to climb easily in their extended form. The stability of small vacancy dipoles is discussed and it is seen that the introduction of jogs may lead to the formation of Z-type faulted vacancy dipoles.
    Original languageEnglish
    JournalJournal of Physics: Condensed Matter
    Volume14
    Issue number11
    Pages (from-to)2929-2956
    ISSN0953-8984
    DOIs
    Publication statusPublished - 25 Mar 2002

    Fingerprint Dive into the research topics of 'Atomistic simulations of dislocation processes in copper'. Together they form a unique fingerprint.

    Cite this