Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

L. Jelver; K. W. Jacobsen; O. Hansen; S. Smidstrup; V. Arcisauskaite; A. Blom

doi:10.1109/NMDC50713.2021.9677494

Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

L. Jelver, K. W. Jacobsen, O. Hansen, S. Smidstrup, V. Arcisauskaite, A. Blom

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Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

Abstract

As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2,3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

Original language	English
Title of host publication	Proceedings of 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)
Number of pages	1
Publisher	IEEE
Publication date	2021
ISBN (Electronic)	978-1-6654-1892-8
DOIs	https://doi.org/10.1109/NMDC50713.2021.9677494
Publication status	Published - 2021
Event	16th Nanotechnology Materials and Devices Conference - Vancouver, Canada Duration: 12 Dec 2021 → 15 Dec 2021 Conference number: 16

Conference

Conference	16th Nanotechnology Materials and Devices Conference
Number	16
Country/Territory	Canada
City	Vancouver
Period	12/12/2021 → 15/12/2021

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10.1109/NMDC50713.2021.9677494

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title = "Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics",

abstract = "As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2,3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.",

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Jelver, L, Jacobsen, KW , Hansen, O, Smidstrup, S, Arcisauskaite, V & Blom, A 2021, Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics. in Proceedings of 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 16th Nanotechnology Materials and Devices Conference, Vancouver, British Columbia, Canada, 12/12/2021. https://doi.org/10.1109/NMDC50713.2021.9677494

Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics. / Jelver, L.; Jacobsen, K. W.; Hansen, O. et al.
Proceedings of 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2021.

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

TY - ABST

T1 - Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

AU - Jelver, L.

AU - Jacobsen, K. W.

AU - Hansen, O.

AU - Smidstrup, S.

AU - Arcisauskaite, V.

AU - Blom, A.

N1 - Conference code: 16

PY - 2021

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N2 - As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2,3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

AB - As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2,3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

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DO - 10.1109/NMDC50713.2021.9677494

M3 - Conference abstract in proceedings

BT - Proceedings of 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)

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T2 - 16th Nanotechnology Materials and Devices Conference

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ER -

Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

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