Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Yi Rang Lim, Jin Kyu Han, Yeoheung Yoon, Jae-Bok Lee, Cheolho Jeon, Min Choi, Hyunju Chang, Noejung Park, Jung Hwa Kim, Zonghoon Lee, Wooseok Song, Sung Myung, Sun Sook Lee, Ki-Seok An, Jong-Hyun Ahn, Jongsun Lim*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.
Original languageEnglish
Article numbere1901405
JournalAdvanced Materials
Volume31
Issue number29
Number of pages14
DOIs
Publication statusPublished - 2019

Keywords

  • 2D ternay alloys
  • Hydrogen evolution reaction
  • Photodetectors
  • Transition metal dichalcogenides

Cite this

Lim, Yi Rang ; Han, Jin Kyu ; Yoon, Yeoheung ; Lee, Jae-Bok ; Jeon, Cheolho ; Choi, Min ; Chang, Hyunju ; Park, Noejung ; Kim, Jung Hwa ; Lee, Zonghoon ; Song, Wooseok ; Myung, Sung ; Lee, Sun Sook ; An, Ki-Seok ; Ahn, Jong-Hyun ; Lim, Jongsun. / Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. In: Advanced Materials. 2019 ; Vol. 31, No. 29.
@article{03624df2ea58467488cb187f57b0e282,
title = "Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications",
abstract = "Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.",
keywords = "2D ternay alloys, Hydrogen evolution reaction, Photodetectors, Transition metal dichalcogenides",
author = "Lim, {Yi Rang} and Han, {Jin Kyu} and Yeoheung Yoon and Jae-Bok Lee and Cheolho Jeon and Min Choi and Hyunju Chang and Noejung Park and Kim, {Jung Hwa} and Zonghoon Lee and Wooseok Song and Sung Myung and Lee, {Sun Sook} and Ki-Seok An and Jong-Hyun Ahn and Jongsun Lim",
year = "2019",
doi = "10.1002/adma.201901405",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley",
number = "29",

}

Lim, YR, Han, JK, Yoon, Y, Lee, J-B, Jeon, C, Choi, M, Chang, H, Park, N, Kim, JH, Lee, Z, Song, W, Myung, S, Lee, SS, An, K-S, Ahn, J-H & Lim, J 2019, 'Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications', Advanced Materials, vol. 31, no. 29, e1901405. https://doi.org/10.1002/adma.201901405

Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. / Lim, Yi Rang; Han, Jin Kyu; Yoon, Yeoheung; Lee, Jae-Bok; Jeon, Cheolho; Choi, Min; Chang, Hyunju; Park, Noejung; Kim, Jung Hwa; Lee, Zonghoon; Song, Wooseok; Myung, Sung; Lee, Sun Sook; An, Ki-Seok; Ahn, Jong-Hyun; Lim, Jongsun.

In: Advanced Materials, Vol. 31, No. 29, e1901405, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

AU - Lim, Yi Rang

AU - Han, Jin Kyu

AU - Yoon, Yeoheung

AU - Lee, Jae-Bok

AU - Jeon, Cheolho

AU - Choi, Min

AU - Chang, Hyunju

AU - Park, Noejung

AU - Kim, Jung Hwa

AU - Lee, Zonghoon

AU - Song, Wooseok

AU - Myung, Sung

AU - Lee, Sun Sook

AU - An, Ki-Seok

AU - Ahn, Jong-Hyun

AU - Lim, Jongsun

PY - 2019

Y1 - 2019

N2 - Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.

AB - Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.

KW - 2D ternay alloys

KW - Hydrogen evolution reaction

KW - Photodetectors

KW - Transition metal dichalcogenides

U2 - 10.1002/adma.201901405

DO - 10.1002/adma.201901405

M3 - Journal article

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 29

M1 - e1901405

ER -