Atomic Layer Deposition Alumina-Mediated Graphene Transfer for Reduced Process Contamination

Abhay Shivayogimath*, Lars Eriksson, Patrick Rebsdorf Whelan, David M.A. Mackenzie, Birong Luo, Peter Bøggild, Timothy J. Booth

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Herein, an approach for integrating gate insulator deposition and graphene transfer steps in the fabrication of graphene field-effect devices is reported. A thin layer of Al2O3 is deposited by atomic layer deposition (ALD) onto as-grown graphene on copper, where the improved surface wettability of graphene on copper aids in obtaining a uniform deposition of the ALD layer. The ALD Al2O3/graphene stack is then mechanically delaminated from the copper surface and transferred onto the desired target substrate. An ALD layer thickness between 20 and 30 nm is optimal for facilitating such transfer. The ALD layer protects graphene from process contamination during subsequent transfer and device fabrication, resulting in reduced doping in measured field-effect devices.
Original languageEnglish
Article number1900424
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number11
Number of pages6
ISSN1862-6254
DOIs
Publication statusPublished - 2019

Keywords

  • Atomic layer deposition
  • Encapsulation
  • Field-effect transistors (FETs)
  • Graphene
  • Transfer

Cite this

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title = "Atomic Layer Deposition Alumina-Mediated Graphene Transfer for Reduced Process Contamination",
abstract = "Herein, an approach for integrating gate insulator deposition and graphene transfer steps in the fabrication of graphene field-effect devices is reported. A thin layer of Al2O3 is deposited by atomic layer deposition (ALD) onto as-grown graphene on copper, where the improved surface wettability of graphene on copper aids in obtaining a uniform deposition of the ALD layer. The ALD Al2O3/graphene stack is then mechanically delaminated from the copper surface and transferred onto the desired target substrate. An ALD layer thickness between 20 and 30 nm is optimal for facilitating such transfer. The ALD layer protects graphene from process contamination during subsequent transfer and device fabrication, resulting in reduced doping in measured field-effect devices.",
keywords = "Atomic layer deposition, Encapsulation, Field-effect transistors (FETs), Graphene, Transfer",
author = "Abhay Shivayogimath and Lars Eriksson and Whelan, {Patrick Rebsdorf} and Mackenzie, {David M.A.} and Birong Luo and Peter B{\o}ggild and Booth, {Timothy J.}",
year = "2019",
doi = "10.1002/pssr.201900424",
language = "English",
volume = "13",
journal = "Physica Status Solidi. Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "11",

}

Atomic Layer Deposition Alumina-Mediated Graphene Transfer for Reduced Process Contamination. / Shivayogimath, Abhay; Eriksson, Lars; Whelan, Patrick Rebsdorf; Mackenzie, David M.A.; Luo, Birong; Bøggild, Peter; Booth, Timothy J.

In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 11, 1900424, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Atomic Layer Deposition Alumina-Mediated Graphene Transfer for Reduced Process Contamination

AU - Shivayogimath, Abhay

AU - Eriksson, Lars

AU - Whelan, Patrick Rebsdorf

AU - Mackenzie, David M.A.

AU - Luo, Birong

AU - Bøggild, Peter

AU - Booth, Timothy J.

PY - 2019

Y1 - 2019

N2 - Herein, an approach for integrating gate insulator deposition and graphene transfer steps in the fabrication of graphene field-effect devices is reported. A thin layer of Al2O3 is deposited by atomic layer deposition (ALD) onto as-grown graphene on copper, where the improved surface wettability of graphene on copper aids in obtaining a uniform deposition of the ALD layer. The ALD Al2O3/graphene stack is then mechanically delaminated from the copper surface and transferred onto the desired target substrate. An ALD layer thickness between 20 and 30 nm is optimal for facilitating such transfer. The ALD layer protects graphene from process contamination during subsequent transfer and device fabrication, resulting in reduced doping in measured field-effect devices.

AB - Herein, an approach for integrating gate insulator deposition and graphene transfer steps in the fabrication of graphene field-effect devices is reported. A thin layer of Al2O3 is deposited by atomic layer deposition (ALD) onto as-grown graphene on copper, where the improved surface wettability of graphene on copper aids in obtaining a uniform deposition of the ALD layer. The ALD Al2O3/graphene stack is then mechanically delaminated from the copper surface and transferred onto the desired target substrate. An ALD layer thickness between 20 and 30 nm is optimal for facilitating such transfer. The ALD layer protects graphene from process contamination during subsequent transfer and device fabrication, resulting in reduced doping in measured field-effect devices.

KW - Atomic layer deposition

KW - Encapsulation

KW - Field-effect transistors (FETs)

KW - Graphene

KW - Transfer

U2 - 10.1002/pssr.201900424

DO - 10.1002/pssr.201900424

M3 - Journal article

VL - 13

JO - Physica Status Solidi. Rapid Research Letters

JF - Physica Status Solidi. Rapid Research Letters

SN - 1862-6254

IS - 11

M1 - 1900424

ER -