Asymmetric GaAs/AlGaAs T wires with large confinement energies

Hannes Gislason, Wolfgang Werner Langbein, Jørn Märcher Hvam

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    We report on the design and growth of asymmetric T-shaped quantum wires with large one-dimensional confinement energies. Prior to growth, the optimal structure for a given (110) well width is determined by a calculation, The structures are made by molecular beam epitaxy cleaved edge overgrowth. We demonstrate a confinement of 53 meV in an experimental structure consisting of a narrow (110) oriented GaAs/Al0.3Ga0.7As quantum well overgrown on much wider(001) oriented Al0.14Ga0.86As/Al0.3Ga0.7As wells. (C) 1996 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number21
    Pages (from-to)3248-3250
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.


    • GAAS
    • WELLS

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