In this work, we grow CZTS by co-sputtering precursors on a representative Tunnel Oxide Passivated Contact (TOPCon) n-Si structure, and investigate how the growth conditions and bottom cell structure affect the photovoltaic properties of CZTS. In particular, CZTS is grown on two different layers: the n-type poly-Si electron selective layer, and a TiN barrier layer. The properties of the resulting CZTS films are compared to those of a baseline single junction CZTS solar cell, and it is shown that the resulting CZTS films can differ considerably. The advantages and limitations of each resulting case are then used to assess the potential of achieving high-quality CZTS absorbers without compromising the performance of the bottom Si cell. Based on this, an elementary monolithic CZTS/Si tandem device is presented, and the aspects behind its low performance are discussed based on the work conducted.
|Publication status||Published - 2018|
|Event||9th European Kesterite Workshop - Ghent, Belgium|
Duration: 29 Nov 2018 → 30 Nov 2018
|Workshop||9th European Kesterite Workshop|
|Period||29/11/2018 → 30/11/2018|
- Solar cells