Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride & Logic-Level Power Transistors

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2018Researchpeer-review

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Wide bandgap power semiconductors are key enablers for increasing the power density of switch-mode power supplies. However, they require new gate drive technologies. This paper examines and characterizes a fabricated gate-driver in a class-E resonant inverter. The gate-driver’s total area of 1.2mm2 includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry. A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF. Both bondwires and the diode’s parasitic capacitance is neglegible. The gate-driver’s functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of –2V.
Original languageEnglish
Title of host publicationProceedings of 2018 IEEE Nordic Circuits and Systems Conference
Number of pages6
Publication date2018
ISBN (Print)9781538676561
Publication statusPublished - 2018
Event2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) - Tallink Spa & Conference Hotel, Tallinn, Estonia
Duration: 30 Oct 201831 Oct 2018


Conference2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
LocationTallink Spa & Conference Hotel
Series2018 Ieee Nordic Circuits and Systems Conference (norcas): Norchip and International Symposium of System-on-chip (soc)
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Logic gates, Electrostatic discharges, Parasitic capacitance, Resistance, MOSFET, Switching circuits, Self-oscillating, ASIC, Analog integrated circuit, Gate-driver

ID: 164311308