Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride & Logic-Level Power Transistors

Jacob E. F. Overgaard, Jens Christian Hertel, Jens Pejtersen, Arnold Knott

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Wide bandgap power semiconductors are key enablers for increasing the power density of switch-mode power supplies. However, they require new gate drive technologies. This paper examines and characterizes a fabricated gate-driver in a class-E resonant inverter. The gate-driver’s total area of 1.2mm2 includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry. A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF. Both bondwires and the diode’s parasitic capacitance is neglegible. The gate-driver’s functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of –2V.
    Original languageEnglish
    Title of host publicationProceedings of 2018 IEEE Nordic Circuits and Systems Conference
    Number of pages6
    PublisherIEEE
    Publication date2018
    Pages1-6
    ISBN (Print)9781538676561
    DOIs
    Publication statusPublished - 2018
    Event2018 IEEE Nordic Circuits and Systems Conference: NORCHIP and International Symposium of System-on-Chip (SoC) - Tallin Spa & Conference Hotel, Tallinn, Estonia
    Duration: 30 Oct 201831 Oct 2018
    https://ieeexplore.ieee.org/xpl/conhome/8552599/proceeding

    Conference

    Conference2018 IEEE Nordic Circuits and Systems Conference
    LocationTallin Spa & Conference Hotel
    Country/TerritoryEstonia
    CityTallinn
    Period30/10/201831/10/2018
    Internet address

    Keywords

    • Logic gates
    • Electrostatic discharges
    • Parasitic capacitance
    • Resistance
    • MOSFET
    • Switching circuits
    • Self-oscillating
    • ASIC
    • Analog integrated circuit
    • Gate-driver

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