The carrier thermodynamics of InAs self assembled quantum dot (QD) are investigated. The investigated parameters include the dependence of quantum dot photoluminescence on temperature and the photoluminescence (PL) dependence on the excitation power density. Results are discussed on the basis of steady state model. The model predicts that the photoluminescence integrated intensity has linear dependence on the excitation power density in low temperature range, and super linear in the high temperature range. Our data matches the prediction of the steady state model. In our sample the super linearity starts to take place at T = 150 K and the super linear behavior of the photoluminescence on excitation power density proves that the carrier dynamics in our quantum dot sample are dominated by uncorrelated electron hole pair in the high temperature region.