TY - JOUR
T1 - Apparent size effects on dopant activation in nanometer-wide Si fins
AU - Folkersma, Steven
AU - Bogdanowicz, Janusz
AU - Favia, Paola
AU - Wouters, Lennaert
AU - Petersen, Dirch Hjorth
AU - Hansen, Ole
AU - Henrichsen, Henrik Hartmann
AU - Nielsen, Peter Former
AU - Shiv, Lior
AU - Vandervorst, Wilfried
PY - 2021
Y1 - 2021
N2 - Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered a solution. In this article, we study size-dependent effects on the dopant activation in nanometer-wide Si fins using a novel correlative approach. We start by showing that the micro four-point probe technique can be used to precisely measure the resistance of B doped and (laser) annealed Si fins. Next, we use transmission electron microscopy and scanning spreading resistance microscopy to show that the observed width dependence of the apparent sheet resistance of these fins can be explained by either a partially or a fully inactive region forming along the top of the fin sidewalls according to the annealing conditions.
AB - Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered a solution. In this article, we study size-dependent effects on the dopant activation in nanometer-wide Si fins using a novel correlative approach. We start by showing that the micro four-point probe technique can be used to precisely measure the resistance of B doped and (laser) annealed Si fins. Next, we use transmission electron microscopy and scanning spreading resistance microscopy to show that the observed width dependence of the apparent sheet resistance of these fins can be explained by either a partially or a fully inactive region forming along the top of the fin sidewalls according to the annealing conditions.
U2 - 10.1116/6.0000921
DO - 10.1116/6.0000921
M3 - Journal article
SN - 1071-1023
VL - 39
JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
IS - 2
M1 - 023202
ER -