Apparent size effects on dopant activation in nanometer-wide Si fins

Steven Folkersma*, Janusz Bogdanowicz, Paola Favia, Lennaert Wouters, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Former Nielsen, Lior Shiv, Wilfried Vandervorst

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered a solution. In this article, we study size-dependent effects on the dopant activation in nanometer-wide Si fins using a novel correlative approach. We start by showing that the micro four-point probe technique can be used to precisely measure the resistance of B doped and (laser) annealed Si fins. Next, we use transmission electron microscopy and scanning spreading resistance microscopy to show that the observed width dependence of the apparent sheet resistance of these fins can be explained by either a partially or a fully inactive region forming along the top of the fin sidewalls according to the annealing conditions.
Original languageEnglish
Article number023202
JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Issue number2
Publication statusPublished - 2021


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