Anomaly Detection in Float-Zone Crystal Growth of Silicon

Tingting Chen*, Guido Tosello, Nico Werner, Matteo Calaon

*Corresponding author for this work

Research output: Contribution to journalConference articleResearchpeer-review

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Abstract

Float-Zone (FZ) crystal growth can manufacture silicon crystal with high purity and low oxygen concentration. However, due to the limited capability of FZ machines, oxidation contamination cannot be avoided, and an oxide layer sometimes would form on unmelted polycrystalline silicon surface. Oxide layers, so-called watermark, would negatively affect the crystal quality. Consequently, it is desirable to have an automated watermark detection in order to take corrective action in the early stages of the process. This paper proposed a complete framework for watermark detection on FZ images, including pre-processing, feature selection and classification. The results show it can act as a promising quality assurance tool for the FZ process.
Original languageEnglish
JournalProcedia CIRP
Volume107
Pages (from-to)1515-1519
ISSN2212-8271
DOIs
Publication statusPublished - 2022
Event55th CIRP Conference on Manufacturing Systems Leading Manufacturing Systems Transformation - Lugano, Switzerland
Duration: 28 Jun 20221 Jul 2022

Conference

Conference55th CIRP Conference on Manufacturing Systems Leading Manufacturing Systems Transformation
Country/TerritorySwitzerland
CityLugano
Period28/06/202201/07/2022

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