Anomalous activation of shallow B+ implants in Ge

B.R. Yates; B.L. Darby; N.G. Rudawski; K.S. Jones; Dirch Hjorth Petersen; Ole Hansen; Rong Lin; P.F. Nielsen; A. Kontos

doi:10.1016/j.matlet.2011.07.093

Anomalous activation of shallow B+ implants in Ge

B.R. Yates, B.L. Darby, N.G. Rudawski, K.S. Jones, Dirch Hjorth Petersen, Ole Hansen, Rong Lin, P.F. Nielsen, A. Kontos

Center for Individual Nanoparticle Functionality

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted to a dose of 5.0×1015 cm-2 displaying an estimated maximum active B concentration of 4.0×1020 cm-3 as compared to 2.0×1020 cm-3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm -2, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. © 2011 Elsevier B.V. All rights reserved.

Original language	English
Journal	Materials Letters
Volume	65
Issue number	23-24
Pages (from-to)	3540-3543
ISSN	0167-577X
DOIs	https://doi.org/10.1016/j.matlet.2011.07.093
Publication status	Published - 2011

Keywords

Ge
TEM
B
Dopant activation
Micro four point probe

Access to Document

10.1016/j.matlet.2011.07.093

OpenUrl availability

Full text

Cite this

@article{558267b6d2484e51a140c4d85b15d8d2,

title = "Anomalous activation of shallow B+ implants in Ge",

abstract = "The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted to a dose of 5.0×1015 cm-2 displaying an estimated maximum active B concentration of 4.0×1020 cm-3 as compared to 2.0×1020 cm-3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm -2, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

keywords = "Ge, TEM, B, Dopant activation, Micro four point probe",

author = "B.R. Yates and B.L. Darby and N.G. Rudawski and K.S. Jones and Petersen, {Dirch Hjorth} and Ole Hansen and Rong Lin and P.F. Nielsen and A. Kontos",

year = "2011",

doi = "10.1016/j.matlet.2011.07.093",

language = "English",

volume = "65",

pages = "3540--3543",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "23-24",

}

TY - JOUR

T1 - Anomalous activation of shallow B+ implants in Ge

AU - Yates, B.R.

AU - Darby, B.L.

AU - Rudawski, N.G.

AU - Jones, K.S.

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Lin, Rong

AU - Nielsen, P.F.

AU - Kontos, A.

PY - 2011

Y1 - 2011

N2 - The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted to a dose of 5.0×1015 cm-2 displaying an estimated maximum active B concentration of 4.0×1020 cm-3 as compared to 2.0×1020 cm-3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm -2, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. © 2011 Elsevier B.V. All rights reserved.

AB - The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted to a dose of 5.0×1015 cm-2 displaying an estimated maximum active B concentration of 4.0×1020 cm-3 as compared to 2.0×1020 cm-3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm -2, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. © 2011 Elsevier B.V. All rights reserved.

KW - Ge

KW - TEM

KW - B

KW - Dopant activation

KW - Micro four point probe

U2 - 10.1016/j.matlet.2011.07.093

DO - 10.1016/j.matlet.2011.07.093

M3 - Journal article

SN - 0167-577X

VL - 65

SP - 3540

EP - 3543

JO - Materials Letters

JF - Materials Letters

IS - 23-24

ER -

Anomalous activation of shallow B+ implants in Ge

Abstract

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this