Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Houssein El Dirani*, Ayman Nassar Kamel, Marco Casale, Sébastien Kerdiles, Christelle Monat, Xavier Letartre, Minhao Pu, Leif Katsuo Oxenløwe, Kresten Yvind, Corrado Sciancalepore

*Corresponding author for this work

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Abstract

Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.
Original languageEnglish
Article number081102
JournalApplied Physics Letters
Volume113
Issue number8
Number of pages5
ISSN0003-6951
DOIs
Publication statusPublished - 2018

Cite this

El Dirani, H., Kamel, A. N., Casale, M., Kerdiles, S., Monat, C., Letartre, X., ... Sciancalepore, C. (2018). Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics. Applied Physics Letters, 113(8), [081102]. https://doi.org/10.1063/1.5038795
El Dirani, Houssein ; Kamel, Ayman Nassar ; Casale, Marco ; Kerdiles, Sébastien ; Monat, Christelle ; Letartre, Xavier ; Pu, Minhao ; Oxenløwe, Leif Katsuo ; Yvind, Kresten ; Sciancalepore, Corrado. / Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics. In: Applied Physics Letters. 2018 ; Vol. 113, No. 8.
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abstract = "Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.",
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Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics. / El Dirani, Houssein; Kamel, Ayman Nassar; Casale, Marco; Kerdiles, Sébastien; Monat, Christelle; Letartre, Xavier; Pu, Minhao; Oxenløwe, Leif Katsuo; Yvind, Kresten; Sciancalepore, Corrado.

In: Applied Physics Letters, Vol. 113, No. 8, 081102, 2018.

Research output: Contribution to journalJournal articleResearchpeer-review

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AU - El Dirani, Houssein

AU - Kamel, Ayman Nassar

AU - Casale, Marco

AU - Kerdiles, Sébastien

AU - Monat, Christelle

AU - Letartre, Xavier

AU - Pu, Minhao

AU - Oxenløwe, Leif Katsuo

AU - Yvind, Kresten

AU - Sciancalepore, Corrado

PY - 2018

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N2 - Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.

AB - Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.

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