Annealing effect on the surface morphology of Si(100)

SM Lee, Seunghwan Lee, MM Sung, D Marton, SS Perry, JW Rabalais

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Original language	English
Title of host publication	Proceedings of the 11th Int. Conference on Ion Implant Technology 1997
Publication date	1997
Pages	650-653
Publication status	Published - 1997
Externally published	Yes
Event	11th International Conference on Ion Implant Technology - Austin, United States Duration: 16 Jun 1996 → 21 Jun 1996 Conference number: 11

Conference	11th International Conference on Ion Implant Technology
Number	11
Country/Territory	United States
City	Austin
Period	16/06/1996 → 21/06/1996

OpenUrl availability

@inproceedings{a9ca77cddce54db88f13275573cb6d51,

title = "Annealing effect on the surface morphology of Si(100)",

author = "SM Lee and Seunghwan Lee and MM Sung and D Marton and SS Perry and JW Rabalais",

year = "1997",

language = "English",

pages = "650--653",

booktitle = "Proceedings of the 11th Int. Conference on Ion Implant Technology 1997",

note = "11th International Conference on Ion Implant Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

TY - GEN

T1 - Annealing effect on the surface morphology of Si(100)

AU - Lee, SM

AU - Lee, Seunghwan

AU - Sung, MM

AU - Marton, D

AU - Perry, SS

AU - Rabalais, JW

N1 - Conference code: 11

PY - 1997

Y1 - 1997

M3 - Article in proceedings

SP - 650

EP - 653

BT - Proceedings of the 11th Int. Conference on Ion Implant Technology 1997

T2 - 11th International Conference on Ion Implant Technology

Y2 - 16 June 1996 through 21 June 1996

ER -