Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

Rafael Jozef Taboryski; Thomas Clausen; Jørn Bindslev Hansen; Johannes Skov; Jonatan Kutchinsky; Claus Birger Sørensen; Poul Erik Lindelof

doi:10.1063/1.117796

Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

Rafael Jozef Taboryski, Thomas Clausen, Jørn Bindslev Hansen, Johannes Skov, Jonatan Kutchinsky, Claus Birger Sørensen, Poul Erik Lindelof

Research output: Contribution to journal › Journal article › Research › peer-review

487 Downloads (Pure)

Abstract

By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation doped (n(++)) conduction layer embedded below the delta-doped layers in the GaAs crystal. When cooled to below the critical temperature (approximate to 1.2 K) of Al, superconductivity is induced in the conductive layer of the semiconductor. We have studied the current voltage (I-V) characteristics in a planar geometry where the Al has been removed in a thin stripe. We find a manifestation of the superconducting energy gap and a rich fine structure at injection energies both below and above the gap. (C) 1996 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	69
Issue number	5
Pages (from-to)	656-658
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.117796
Publication status	Published - 1996

Bibliographical note

Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

TRANSPORT
CONDUCTANCE
TRANSITION
SEMICONDUCTOR CONTACTS
CONSTRICTIONS

Access to Document

10.1063/1.117796

LindelofFinal published version, 105 KB

http://link.aip.org/link/?APPLAB/69/656/1

OpenUrl availability

Full text

Cite this

@article{4c1917f60ac04cd587a0c5e58e2be882,

title = "Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films",

abstract = "By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation doped (n(++)) conduction layer embedded below the delta-doped layers in the GaAs crystal. When cooled to below the critical temperature (approximate to 1.2 K) of Al, superconductivity is induced in the conductive layer of the semiconductor. We have studied the current voltage (I-V) characteristics in a planar geometry where the Al has been removed in a thin stripe. We find a manifestation of the superconducting energy gap and a rich fine structure at injection energies both below and above the gap. (C) 1996 American Institute of Physics.",

keywords = "TRANSPORT, CONDUCTANCE, TRANSITION, SEMICONDUCTOR CONTACTS, CONSTRICTIONS",

author = "Taboryski, {Rafael Jozef} and Thomas Clausen and Hansen, {J{\o}rn Bindslev} and Johannes Skov and Jonatan Kutchinsky and S{\o}rensen, {Claus Birger} and Lindelof, {Poul Erik}",

note = "Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "1996",

doi = "10.1063/1.117796",

language = "English",

volume = "69",

pages = "656--658",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

AU - Taboryski, Rafael Jozef

AU - Clausen, Thomas

AU - Hansen, Jørn Bindslev

AU - Skov, Johannes

AU - Kutchinsky, Jonatan

AU - Sørensen, Claus Birger

AU - Lindelof, Poul Erik

N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1996

Y1 - 1996

N2 - By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation doped (n(++)) conduction layer embedded below the delta-doped layers in the GaAs crystal. When cooled to below the critical temperature (approximate to 1.2 K) of Al, superconductivity is induced in the conductive layer of the semiconductor. We have studied the current voltage (I-V) characteristics in a planar geometry where the Al has been removed in a thin stripe. We find a manifestation of the superconducting energy gap and a rich fine structure at injection energies both below and above the gap. (C) 1996 American Institute of Physics.

AB - By placing several Si delta-doped layers close to the surface of a GaAs molecular beam epitaxy-grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between an in situ deposited (without breaking the vacuum) Al metallization layer and a highly modulation doped (n(++)) conduction layer embedded below the delta-doped layers in the GaAs crystal. When cooled to below the critical temperature (approximate to 1.2 K) of Al, superconductivity is induced in the conductive layer of the semiconductor. We have studied the current voltage (I-V) characteristics in a planar geometry where the Al has been removed in a thin stripe. We find a manifestation of the superconducting energy gap and a rich fine structure at injection energies both below and above the gap. (C) 1996 American Institute of Physics.

KW - TRANSPORT

KW - CONDUCTANCE

KW - TRANSITION

KW - SEMICONDUCTOR CONTACTS

KW - CONSTRICTIONS

U2 - 10.1063/1.117796

DO - 10.1063/1.117796

M3 - Journal article

SN - 0003-6951

VL - 69

SP - 656

EP - 658

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Andreev reflections at interfaces between delta-doped GaAs and superconducting Al films

Abstract

Bibliographical note

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this