Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Lukas Stampfer, Damon J. Carrad, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas S. Jespersen*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
Original languageEnglish
Article number2108878
JournalAdvanced Materials
Number of pages7
ISSN0935-9648
DOIs
Publication statusAccepted/In press - 2022

Fingerprint

Dive into the research topics of 'Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires'. Together they form a unique fingerprint.

Cite this