Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Lukas Stampfer, Damon J. Carrad, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas S. Jespersen*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
Original languageEnglish
Article number2108878
JournalAdvanced Materials
Issue number11
Number of pages7
Publication statusPublished - 2022


  • Hybrid superconductivity
  • Quantum interference
  • Quantum transport
  • Semiconductor nanowires
  • Surface accumulation


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