Analytical description of the 1s exciton linewidth temperature dependence in transition metal dichalcogenides

J. C.G. Henriques, N. A. Mortensen, N. M.R. Peres*

*Corresponding author for this work

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Abstract

We obtain an analytical expression for the linewidth of the 1s exciton as a function of temperature in transition metal dichalcogenides. The total linewidth, as a function of temperature, is dominated by three contributions: (i) the radiative decay (essentially temperature independent), (ii) the phonon-induced intravalley scattering, and (iii) the phonon-induced intervalley scattering. Our approach uses a variational Ansatz to solve the Wannier equation, allowing for an analytical treatment of the excitonic problem, including rates of the decay dynamics. Our results are in good agreement with experimental data already present in the literature and can be used to readily predict the value of the total linewidth at any temperature in the broad class of excitonic two-dimensional materials.

Original languageEnglish
Article number235402
JournalPhysical Review B
Volume103
Issue number23
Number of pages10
ISSN2469-9950
DOIs
Publication statusPublished - 2021

Bibliographical note

Funding Information:
N.M.R.P. acknowledges support by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UIDB/04650/2020. J.C.G.H. acknowledges the Center of Physics for a grant funded by the UIDB/04650/2020 strategic project and POCI-01-0145-FEDER-028887. N.M.R.P. acknowledges support from the European Commission through the project “Graphene-Driven Revolutions in ICT and Beyond” (Ref. No. 881603, CORE 3), COMPETE 2020, PORTUGAL 2020, FEDER, and the FCT through projects POCI-01-0145-FEDER-028114 and PTDC/NAN-OPT/29265/2017. N.A.M. is a VILLUM Investigator supported by VILLUM FONDEN (Grant No. 16498). The Center for Nanostructured Graphene is sponsored by the Danish National Research Foundation (Project No. DNRF103).

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