In the last few years the CMOS processes have gone into deep
sub-micron channel lengths. This means that it is now possible to
make GHz applications in CMOS. In analog GHz applications it is
often necessary to have access to inductors. This report describes
the development of a physical model of the planar inductors used
in sub-micron CMOS. The model developed should be ofsuch a quality
that it can be used for even very demanding circuits. The result
of the model should be useable in all the normal circuit
simulators used today. The model should furthermore be very fast
in order to be useable for optimization. To verify the model more
than 40 inductors have been produced and their performance have
been measured. The produced inductors sweep a number of design
parameters of the inductors, in order to get a realistic dataset.
The produced inductors have inductances values of 2 nH to 10 nH,
resonance frequencies of 200 MHz to 9 GHz and Q-values of 0.2 to
5. The comparison of the measured results and the results obtained
using the model are very satisfying. The precision of parameters
such as inductance, resonance frequency and Q-value are within a
few percent, which is a very good result compared to other
published work.
| Publication status | Published - 1997 |
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