Abstract
A new type of monolithic analog read-out memory is described. It consists of a memory element and associated on-chip readout circuitry. The memory can be used for storing sample values of time-varying analog signals. The memory element is a matrix of MOS capacitors, preprogrammed in size by a special mask. The readout element is a bucket-brigade shift register with parallel input and serial output. A test circuit that permits investigation of different principles of information transfer from capacitance matrix to shift register has been developed.
Original language | English |
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Journal | I E E E Journal of Solid State Circuits |
Volume | 10 |
Issue number | 1 |
Pages (from-to) | 55-59 |
ISSN | 0018-9200 |
DOIs | |
Publication status | Published - 1975 |