Analog capacitance ROM with IGFET bucket-brigade shift register

Erik Bruun, Ole Olesen

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    A new type of monolithic analog read-out memory is described. It consists of a memory element and associated on-chip readout circuitry. The memory can be used for storing sample values of time-varying analog signals. The memory element is a matrix of MOS capacitors, preprogrammed in size by a special mask. The readout element is a bucket-brigade shift register with parallel input and serial output. A test circuit that permits investigation of different principles of information transfer from capacitance matrix to shift register has been developed.
    Original languageEnglish
    JournalI E E E Journal of Solid State Circuits
    Issue number1
    Pages (from-to)55-59
    Publication statusPublished - 1975

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    Copyright: 1975 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE


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