A new type of monolithic analog read-out memory is described. It consists of a memory element and associated on-chip readout circuitry. The memory can be used for storing sample values of time-varying analog signals. The memory element is a matrix of MOS capacitors, preprogrammed in size by a special mask. The readout element is a bucket-brigade shift register with parallel input and serial output. A test circuit that permits investigation of different principles of information transfer from capacitance matrix to shift register has been developed.
|Journal||I E E E Journal of Solid State Circuits|
|Publication status||Published - 1975|