An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

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In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
Original languageEnglish
JournalInternational Journal of Microwave and Wireless Technologies
Issue number5
Pages (from-to)965-976
Publication statusPublished - 2017
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Electrical and Electronic Engineering, Circuit design and applications, Si-based devices and IC technologies, Integrated circuit manufacture, Phase comparators, Reconfigurable hardware, Schottky barrier diodes, Semiconducting silicon, Silicon alloys, Tuning, 1dB compression point, Center frequency, Double balanced mixers, IC technology, Local oscillators, Schottky diode mixers, Sige bicmos process, Mixers (machinery)
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