An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

Rasmus Schandorph Michaelsen; Tom Keinicke Johansen; Kjeld M. Tamborg; Vitaliy Zhurbenko; Lei Yan

doi:10.1017/S1759078716001069

An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

Rasmus Schandorph Michaelsen, Tom Keinicke Johansen, Kjeld M. Tamborg, Vitaliy Zhurbenko, Lei Yan

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

Original language	English
Journal	International Journal of Microwave and Wireless Technologies
Volume	9
Issue number	5
Pages (from-to)	965-976
ISSN	1759-0787
DOIs	https://doi.org/10.1017/S1759078716001069
Publication status	Published - 2017

Keywords

Electrical and Electronic Engineering
Circuit design and applications
Si-based devices and IC technologies
Integrated circuit manufacture
Phase comparators
Reconfigurable hardware
Schottky barrier diodes
Semiconducting silicon
Silicon alloys
Tuning
1dB compression point
Center frequency
Double balanced mixers
IC technology
Local oscillators
Schottky diode mixers
Sige bicmos process
Mixers (machinery)

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10.1017/S1759078716001069

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@article{5f30e23da68342eb8fb89e248a99dec1,

title = "An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun",

abstract = "In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.",

keywords = "Electrical and Electronic Engineering, Circuit design and applications, Si-based devices and IC technologies, Integrated circuit manufacture, Phase comparators, Reconfigurable hardware, Schottky barrier diodes, Semiconducting silicon, Silicon alloys, Tuning, 1dB compression point, Center frequency, Double balanced mixers, IC technology, Local oscillators, Schottky diode mixers, Sige bicmos process, Mixers (machinery)",

author = "Michaelsen, {Rasmus Schandorph} and Johansen, {Tom Keinicke} and Tamborg, {Kjeld M.} and Vitaliy Zhurbenko and Lei Yan",

year = "2017",

doi = "10.1017/S1759078716001069",

language = "English",

volume = "9",

pages = "965--976",

journal = "International Journal of Microwave and Wireless Technologies",

issn = "1759-0787",

publisher = "Cambridge University Press",

number = "5",

}

An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun. / Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.; Zhurbenko, Vitaliy; Yan, Lei.

In: International Journal of Microwave and Wireless Technologies, Vol. 9, No. 5, 2017, p. 965-976.

Research output: Contribution to journal › Journal article › Research › peer-review

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T1 - An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

AU - Michaelsen, Rasmus Schandorph

AU - Johansen, Tom Keinicke

AU - Tamborg, Kjeld M.

AU - Zhurbenko, Vitaliy

AU - Yan, Lei

PY - 2017

Y1 - 2017

N2 - In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

AB - In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

KW - Electrical and Electronic Engineering

KW - Circuit design and applications

KW - Si-based devices and IC technologies

KW - Integrated circuit manufacture

KW - Phase comparators

KW - Reconfigurable hardware

KW - Schottky barrier diodes

KW - Semiconducting silicon

KW - Silicon alloys

KW - Tuning

KW - 1dB compression point

KW - Center frequency

KW - Double balanced mixers

KW - IC technology

KW - Local oscillators

KW - Schottky diode mixers

KW - Sige bicmos process

KW - Mixers (machinery)

U2 - 10.1017/S1759078716001069

DO - 10.1017/S1759078716001069

M3 - Journal article

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JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

SN - 1759-0787

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