An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

Rasmus Schandorph Michaelsen, Tom Keinicke Johansen, Kjeld M. Tamborg, Vitaliy Zhurbenko, Lei Yan

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    Abstract

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
    Original languageEnglish
    JournalInternational Journal of Microwave and Wireless Technologies
    Volume9
    Issue number5
    Pages (from-to)965-976
    ISSN1759-0787
    DOIs
    Publication statusPublished - 2017

    Keywords

    • Electrical and Electronic Engineering
    • Circuit design and applications
    • Si-based devices and IC technologies
    • Integrated circuit manufacture
    • Phase comparators
    • Reconfigurable hardware
    • Schottky barrier diodes
    • Semiconducting silicon
    • Silicon alloys
    • Tuning
    • 1dB compression point
    • Center frequency
    • Double balanced mixers
    • IC technology
    • Local oscillators
    • Schottky diode mixers
    • Sige bicmos process
    • Mixers (machinery)

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