Abstract
| Original language | English |
|---|---|
| Journal | International Journal of Microwave and Wireless Technologies |
| Volume | 9 |
| Issue number | 5 |
| Pages (from-to) | 965-976 |
| ISSN | 1759-0787 |
| DOIs | |
| Publication status | Published - 2017 |
Keywords
- Electrical and Electronic Engineering
- Circuit design and applications
- Si-based devices and IC technologies
- Integrated circuit manufacture
- Phase comparators
- Reconfigurable hardware
- Schottky barrier diodes
- Semiconducting silicon
- Silicon alloys
- Tuning
- 1dB compression point
- Center frequency
- Double balanced mixers
- IC technology
- Local oscillators
- Schottky diode mixers
- Sige bicmos process
- Mixers (machinery)
Cite this
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An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun. / Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.; Zhurbenko, Vitaliy; Yan, Lei.
In: International Journal of Microwave and Wireless Technologies, Vol. 9, No. 5, 2017, p. 965-976.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
AU - Michaelsen, Rasmus Schandorph
AU - Johansen, Tom Keinicke
AU - Tamborg, Kjeld M.
AU - Zhurbenko, Vitaliy
AU - Yan, Lei
PY - 2017
Y1 - 2017
N2 - In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
AB - In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
KW - Electrical and Electronic Engineering
KW - Circuit design and applications
KW - Si-based devices and IC technologies
KW - Integrated circuit manufacture
KW - Phase comparators
KW - Reconfigurable hardware
KW - Schottky barrier diodes
KW - Semiconducting silicon
KW - Silicon alloys
KW - Tuning
KW - 1dB compression point
KW - Center frequency
KW - Double balanced mixers
KW - IC technology
KW - Local oscillators
KW - Schottky diode mixers
KW - Sige bicmos process
KW - Mixers (machinery)
U2 - 10.1017/S1759078716001069
DO - 10.1017/S1759078716001069
M3 - Journal article
VL - 9
SP - 965
EP - 976
JO - International Journal of Microwave and Wireless Technologies
JF - International Journal of Microwave and Wireless Technologies
SN - 1759-0787
IS - 5
ER -