Abstract
In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
| Original language | English |
|---|---|
| Journal | International Journal of Microwave and Wireless Technologies |
| Volume | 9 |
| Issue number | 5 |
| Pages (from-to) | 965-976 |
| ISSN | 1759-0787 |
| DOIs | |
| Publication status | Published - 2017 |
Keywords
- Electrical and Electronic Engineering
- Circuit design and applications
- Si-based devices and IC technologies
- Integrated circuit manufacture
- Phase comparators
- Reconfigurable hardware
- Schottky barrier diodes
- Semiconducting silicon
- Silicon alloys
- Tuning
- 1dB compression point
- Center frequency
- Double balanced mixers
- IC technology
- Local oscillators
- Schottky diode mixers
- Sige bicmos process
- Mixers (machinery)