An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

Rasmus Schandorph Michaelsen, Tom Keinicke Johansen, Kjeld M. Tamborg, Vitaliy Zhurbenko, Lei Yan

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Abstract

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
Original languageEnglish
JournalInternational Journal of Microwave and Wireless Technologies
Volume9
Issue number5
Pages (from-to)965-976
ISSN1759-0787
DOIs
Publication statusPublished - 2017

Keywords

  • Electrical and Electronic Engineering
  • Circuit design and applications
  • Si-based devices and IC technologies
  • Integrated circuit manufacture
  • Phase comparators
  • Reconfigurable hardware
  • Schottky barrier diodes
  • Semiconducting silicon
  • Silicon alloys
  • Tuning
  • 1dB compression point
  • Center frequency
  • Double balanced mixers
  • IC technology
  • Local oscillators
  • Schottky diode mixers
  • Sige bicmos process
  • Mixers (machinery)

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