An injection-lockable InP-DHBT source operating at 421 GHz with −2.4 dBm output power and 1.7% DC-to-RF efficiency

Alexander Possberg*, Florian Vogelsang, Nils Pohl, Maruf Hossain, Hady Yacoub, Tom K. Johansen, Wolfgang Heinrich, Nils Weimann

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 μm transferred substrate InP DHBT MMIC process. A peak output power of −2.4 dBm is measured at 34.6 mW DC-power consumption, resulting in 1.7% DC-to-RF conversion efficiency. The oscillator can be injection-locked through a dedicated locking port which, along with the compact core measuring 0.53 × 0.49 mm2, makes this design suitable for efficient injection-locked oscillator arrays comprising a beam steering function by phase tuning.
Original languageEnglish
Title of host publication2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
PublisherIEEE
Publication date2022
Pages336-339
ISBN (Electronic)978-1-6654-9613-1
DOIs
Publication statusPublished - 2022
Event2022 IEEE/MTT-S International Microwave Symposium (IMS 2022) - Denver, United States
Duration: 19 Jun 202224 Jun 2022

Conference

Conference2022 IEEE/MTT-S International Microwave Symposium (IMS 2022)
Country/TerritoryUnited States
CityDenver
Period19/06/202224/06/2022
SeriesI E E E - M T T S International Microwave Symposium. Digest
ISSN0149-645X

Keywords

  • InP
  • HBT
  • Injection locking
  • Oscillator
  • MMIC
  • Sub-THz
  • THz

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