An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

Vikram Saini, Kresten Yvind, David Larsson

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.
Original languageEnglish
JournalSemiconductor Science and Technology
Volume21
Issue number8
Pages (from-to)1030-1033
ISSN0268-1242
DOIs
Publication statusPublished - 2006

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