An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

Vikram Saini, Kresten Yvind, David Larsson

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.
Original languageEnglish
JournalSemiconductor Science and Technology
Volume21
Issue number8
Pages (from-to)1030-1033
ISSN0268-1242
DOIs
Publication statusPublished - 2006

Cite this

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title = "An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector",
abstract = "A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.",
author = "Vikram Saini and Kresten Yvind and David Larsson",
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An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector. / Saini, Vikram; Yvind, Kresten; Larsson, David.

In: Semiconductor Science and Technology, Vol. 21, No. 8, 2006, p. 1030-1033.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - An in-situ monitoring technique for optimizing antireflection coatings using a monolithic integrated photodetector

AU - Saini, Vikram

AU - Yvind, Kresten

AU - Larsson, David

PY - 2006

Y1 - 2006

N2 - A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.

AB - A very low reflectivity of the order of 10-4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.

U2 - 10.1088/0268-1242/21/8/008

DO - 10.1088/0268-1242/21/8/008

M3 - Journal article

VL - 21

SP - 1030

EP - 1033

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

ER -