Abstract
For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external parasitic parameters. However, under different simulation setup conditions, the parasitic elements can be overestimated or underestimated. This paper presents a systematic approach to set up an EM simulation and obtain accurate parasitic elements of DHBT devices using Ansys high-frequency structure simulator (HFSS). An innovative simulation method is also introduced in order to calculate parasitic base capacitance (Cpb) and base-collector capacitance (Cpbc), which cannot be extracted accurately from 'off-state' measurements. Finally, the EM simulation de-embedded small-signal model is found to provide a good fit to the measured data from 50 MHz to 150 GHz.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2020 German Microwave Conference |
| Publisher | IEEE |
| Publication date | Mar 2020 |
| Pages | 240-243 |
| Article number | 9080231 |
| ISBN (Electronic) | 9783982039718 |
| Publication status | Published - Mar 2020 |
| Event | 2020 German Microwave Conference - Brandenburg University of Technology Cottbus-Senftenberg , Cottbus, Germany Duration: 9 Mar 2020 → 11 Mar 2020 |
Conference
| Conference | 2020 German Microwave Conference |
|---|---|
| Location | Brandenburg University of Technology Cottbus-Senftenberg |
| Country/Territory | Germany |
| City | Cottbus |
| Period | 09/03/2020 → 11/03/2020 |
Keywords
- Double-heterojunction bipolar transistor (DHBT)
- Electromagnetic (EM) simulation
- Small-signal modeling