An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs

Sriperumbuduri Venkata Pawan, Tom K. Johansen, Kevin Erkelenz, Andreas Wentzel, Ralf Doerner, Sebastian Boppel, Matthias Rudolph

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external parasitic parameters. However, under different simulation setup conditions, the parasitic elements can be overestimated or underestimated. This paper presents a systematic approach to set up an EM simulation and obtain accurate parasitic elements of DHBT devices using Ansys high-frequency structure simulator (HFSS). An innovative simulation method is also introduced in order to calculate parasitic base capacitance (Cpb) and base-collector capacitance (Cpbc), which cannot be extracted accurately from 'off-state' measurements. Finally, the EM simulation de-embedded small-signal model is found to provide a good fit to the measured data from 50 MHz to 150 GHz.

Original languageEnglish
Title of host publicationProceedings of the 2020 German Microwave Conference
PublisherIEEE
Publication dateMar 2020
Pages240-243
Article number9080231
ISBN (Electronic)9783982039718
Publication statusPublished - Mar 2020
EventGerman Microwave Conference 2020 - Brandenburg University of Technology Cottbus-Senftenberg , Cottbus, Germany
Duration: 9 Mar 202011 Mar 2020

Conference

ConferenceGerman Microwave Conference 2020
LocationBrandenburg University of Technology Cottbus-Senftenberg
CountryGermany
CityCottbus
Period09/03/202011/03/2020

Keywords

  • Double-heterojunction bipolar transistor (DHBT)
  • Electromagnetic (EM) simulation
  • Small-signal modeling

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