An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs

Sriperumbuduri Venkata Pawan, Tom K. Johansen, Kevin Erkelenz, Andreas Wentzel, Ralf Doerner, Sebastian Boppel, Matthias Rudolph

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external parasitic parameters. However, under different simulation setup conditions, the parasitic elements can be overestimated or underestimated. This paper presents a systematic approach to set up an EM simulation and obtain accurate parasitic elements of DHBT devices using Ansys high-frequency structure simulator (HFSS). An innovative simulation method is also introduced in order to calculate parasitic base capacitance (Cpb) and base-collector capacitance (Cpbc), which cannot be extracted accurately from 'off-state' measurements. Finally, the EM simulation de-embedded small-signal model is found to provide a good fit to the measured data from 50 MHz to 150 GHz.

    Original languageEnglish
    Title of host publicationProceedings of the 2020 German Microwave Conference
    Publication dateMar 2020
    Article number9080231
    ISBN (Electronic)9783982039718
    Publication statusPublished - Mar 2020
    Event2020 German Microwave Conference - Brandenburg University of Technology Cottbus-Senftenberg , Cottbus, Germany
    Duration: 9 Mar 202011 Mar 2020


    Conference2020 German Microwave Conference
    LocationBrandenburg University of Technology Cottbus-Senftenberg


    • Double-heterojunction bipolar transistor (DHBT)
    • Electromagnetic (EM) simulation
    • Small-signal modeling


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