An IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment

Riccardo Pittini, Magnar Hernes, Kjell Ljøkelsøy

Research output: Contribution to conferencePaperResearch

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Abstract

This paper presents results from an on-going research project [1] on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic components to operate in pressurized dielectric environment, by demonstrating reliable operation [2][3]. The intended application is converters for operation down to 3000 meters ocean depth, primarily for oil and gas processing. The paper focuses on needed modifications to a general purpose IGBT gate driver in order to obtain pressure tolerance. Adaptations and modifications of the individual driver components are presented. The results from preliminary testing are promising showing that the considered adaptations give feasible solutions.
Original languageEnglish
Publication date2010
Number of pages6
Publication statusPublished - 2010
Externally publishedYes
EventPCIM Europe 2010: Power Conversion Intelligent Motion - Exhibition Centre Nuremberg, Nuremberg, Germany
Duration: 4 May 20106 May 2010

Conference

ConferencePCIM Europe 2010
LocationExhibition Centre Nuremberg
CountryGermany
CityNuremberg
Period04/05/201006/05/2010

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