An HTS X-band DC SQUID based amplifier: Modeling and development concepts

G.V. Prokopenko; S.V. Shitov; I.V. Borisenko; Jesper Mygind

An HTS X-band DC SQUID based amplifier: Modeling and development concepts

G.V. Prokopenko, S.V. Shitov, I.V. Borisenko, Jesper Mygind

Department of Physics

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed rf design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K(.)GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.

Original language	English
Journal	IEEE Transactions on Applied Superconductivity
Volume	13
Issue number	2
Pages (from-to)	1046-1049
ISSN	1051-8223
Publication status	Published - 2003

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@article{9714b47658da435795e2ac64a9eca1cf,

title = "An HTS X-band DC SQUID based amplifier: Modeling and development concepts",

abstract = "We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed rf design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K(.)GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.",

author = "G.V. Prokopenko and S.V. Shitov and I.V. Borisenko and Jesper Mygind",

year = "2003",

language = "English",

volume = "13",

pages = "1046--1049",

journal = "I E E E Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

}

TY - JOUR

T1 - An HTS X-band DC SQUID based amplifier: Modeling and development concepts

AU - Prokopenko, G.V.

AU - Shitov, S.V.

AU - Borisenko, I.V.

AU - Mygind, Jesper

PY - 2003

Y1 - 2003

N2 - We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed rf design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K(.)GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.

AB - We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed rf design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K(.)GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.

M3 - Journal article

VL - 13

SP - 1046

EP - 1049

JO - I E E E Transactions on Applied Superconductivity

JF - I E E E Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2

ER -