Abstract
The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced.
Original language | English |
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IPC | G03F 7/ 00 A I |
Patent number | WO2016177888 |
Filing date | 10/11/2016 |
Country/Territory | International Bureau of the World Intellectual Property Organization (WIPO) |
Priority date | 06/05/2015 |
Priority number | EP20150166573 |
Publication status | Published - 10 Nov 2016 |