An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

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Abstract

For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and the
peak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.
Original languageEnglish
Title of host publicationProceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherIEEE
Publication date2018
Pages95-99
ISBN (Print)9781538643921
DOIs
Publication statusPublished - 2018
EventIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018 - XI' An Shaanxi, China
Duration: 17 May 201819 May 2018

Workshop

WorkshopIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018
CountryChina
CityXI' An Shaanxi
Period17/05/201819/05/2018

Keywords

  • DC-DC converter
  • Switched-capacitor
  • Multilevel
  • Asynchronous
  • Mains voltage
  • High characteristic impedance
  • Gallium nitride
  • Silicon carbide
  • Wide bandgap devices

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