An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

94 Downloads (Pure)

Abstract

For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and the
peak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.
Original languageEnglish
Title of host publicationProceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia
PublisherIEEE
Publication date2018
Pages95-99
ISBN (Print)9781538643921
DOIs
Publication statusPublished - 2018
EventIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018 - XI' An Shaanxi, China
Duration: 17 May 201819 May 2018

Workshop

WorkshopIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018
CountryChina
CityXI' An Shaanxi
Period17/05/201819/05/2018

Keywords

  • DC-DC converter
  • Switched-capacitor
  • Multilevel
  • Asynchronous
  • Mains voltage
  • High characteristic impedance
  • Gallium nitride
  • Silicon carbide
  • Wide bandgap devices

Cite this

Fan, L., Lumby, C. K., Knott, A., & Jørgensen, I. H. H. (2018). An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices. In Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (pp. 95-99). IEEE. https://doi.org/10.1109/WiPDAAsia.2018.8734649
Fan, Lin ; Lumby, Christian Kaalø ; Knott, Arnold ; Jørgensen, Ivan Harald Holger. / An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices. Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia . IEEE, 2018. pp. 95-99
@inproceedings{71cf41c86e5c421bb7af07f14d81fac2,
title = "An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices",
abstract = "For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 {\%} and thepeak-to-peak output voltage ripple is reduced by 39 {\%}, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 {\%} is achieved.",
keywords = "DC-DC converter, Switched-capacitor, Multilevel, Asynchronous, Mains voltage, High characteristic impedance, Gallium nitride, Silicon carbide, Wide bandgap devices",
author = "Lin Fan and Lumby, {Christian Kaal{\o}} and Arnold Knott and J{\o}rgensen, {Ivan Harald Holger}",
year = "2018",
doi = "10.1109/WiPDAAsia.2018.8734649",
language = "English",
isbn = "9781538643921",
pages = "95--99",
booktitle = "Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "IEEE",
address = "United States",

}

Fan, L, Lumby, CK, Knott, A & Jørgensen, IHH 2018, An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices. in Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia . IEEE, pp. 95-99, IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018, XI' An Shaanxi, China, 17/05/2018. https://doi.org/10.1109/WiPDAAsia.2018.8734649

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices. / Fan, Lin; Lumby, Christian Kaalø; Knott, Arnold; Jørgensen, Ivan Harald Holger.

Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia . IEEE, 2018. p. 95-99.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

AU - Fan, Lin

AU - Lumby, Christian Kaalø

AU - Knott, Arnold

AU - Jørgensen, Ivan Harald Holger

PY - 2018

Y1 - 2018

N2 - For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and thepeak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.

AB - For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and thepeak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.

KW - DC-DC converter

KW - Switched-capacitor

KW - Multilevel

KW - Asynchronous

KW - Mains voltage

KW - High characteristic impedance

KW - Gallium nitride

KW - Silicon carbide

KW - Wide bandgap devices

U2 - 10.1109/WiPDAAsia.2018.8734649

DO - 10.1109/WiPDAAsia.2018.8734649

M3 - Article in proceedings

SN - 9781538643921

SP - 95

EP - 99

BT - Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - IEEE

ER -

Fan L, Lumby CK, Knott A, Jørgensen IHH. An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices. In Proceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia . IEEE. 2018. p. 95-99 https://doi.org/10.1109/WiPDAAsia.2018.8734649