An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices

Lin Fan, Christian Kaalø Lumby, Arnold Knott, Ivan Harald Holger Jørgensen

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    Abstract

    For the state-of-the-art switched-capacitor DC-DC converters at high-voltage low-power levels, switching loss becomes a major concern and challenge. Existing switching schemes operate power semiconductors at a single common frequency, which does not optimally address the switching losses, especially for a high-conversion-ratio design. This paper presents a concept of Asynchronous-Switched-Capacitor (ASC), which is applied to the GaN switches that are combined with the SiC diodes to improve the efficiency and the power density. Two stages of switched-capacitors are operating with uncorrelated frequencies, without phase and clock synchronization of the control signals. A 380 V, 6 W, 4:1 conversion ratio converter experimentally validates the concept. The efficiency is improved by 4 % and the
    peak-to-peak output voltage ripple is reduced by 39 %, with the proposed ASC switching compared to a synchronous operation. A peak efficiency of 95.4 % is achieved.
    Original languageEnglish
    Title of host publicationProceedings of 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia
    PublisherIEEE
    Publication date2018
    Pages95-99
    ISBN (Print)9781538643921
    DOIs
    Publication statusPublished - 2018
    EventIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018 - XI' An Shaanxi, China
    Duration: 17 May 201819 May 2018

    Workshop

    WorkshopIEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2018
    Country/TerritoryChina
    CityXI' An Shaanxi
    Period17/05/201819/05/2018

    Keywords

    • DC-DC converter
    • Switched-capacitor
    • Multilevel
    • Asynchronous
    • Mains voltage
    • High characteristic impedance
    • Gallium nitride
    • Silicon carbide
    • Wide bandgap devices

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