Abstract
We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.
Original language | English |
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Journal | Materials Science in Semiconductor Processing |
Volume | 91 |
Pages (from-to) | 9-12 |
ISSN | 1369-8001 |
DOIs | |
Publication status | Published - 2019 |
Keywords
- Hydrogen silsesquioxane bonding
- Fluorescent-silicon carbide
- Warm white light-emitting diodes