An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

Li Lin, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Mengning Liang, Zhiqiang Liu, Xiaoyan Yi, Philipp Schuh, Peter Wellmann, Berit Herstrøm, Flemming Jensen, Haiyan Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

401 Downloads (Pure)

Abstract

We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.
Original languageEnglish
JournalMaterials Science in Semiconductor Processing
Volume91
Pages (from-to)9-12
ISSN1369-8001
DOIs
Publication statusPublished - 2019

Keywords

  • Hydrogen silsesquioxane bonding
  • Fluorescent-silicon carbide
  • Warm white light-emitting diodes

Cite this