Abstract
| Original language | English |
|---|---|
| Journal | Materials Science in Semiconductor Processing |
| Volume | 91 |
| Pages (from-to) | 9-12 |
| ISSN | 1369-8001 |
| DOIs | |
| Publication status | Published - 2019 |
Keywords
- Hydrogen silsesquioxane bonding
- Fluorescent-silicon carbide
- Warm white light-emitting diodes
Cite this
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An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. / Lin, Li; Ou, Yiyu; Jokubavicius, Valdas; Syväjärvi, Mikael; Liang, Mengning; Liu, Zhiqiang; Yi, Xiaoyan; Schuh, Philipp; Wellmann, Peter; Herstrøm, Berit; Jensen, Flemming; Ou, Haiyan.
In: Materials Science in Semiconductor Processing, Vol. 91, 2019, p. 9-12.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
AU - Lin, Li
AU - Ou, Yiyu
AU - Jokubavicius, Valdas
AU - Syväjärvi, Mikael
AU - Liang, Mengning
AU - Liu, Zhiqiang
AU - Yi, Xiaoyan
AU - Schuh, Philipp
AU - Wellmann, Peter
AU - Herstrøm, Berit
AU - Jensen, Flemming
AU - Ou, Haiyan
PY - 2019
Y1 - 2019
N2 - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.
AB - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.
KW - Hydrogen silsesquioxane bonding
KW - Fluorescent-silicon carbide
KW - Warm white light-emitting diodes
U2 - 10.1016/j.mssp.2018.10.028
DO - 10.1016/j.mssp.2018.10.028
M3 - Journal article
VL - 91
SP - 9
EP - 12
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -