An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

Li Lin; Yiyu Ou; Valdas Jokubavicius; Mikael Syväjärvi; Mengning Liang; Zhiqiang Liu; Xiaoyan Yi; Philipp Schuh; Peter Wellmann; Berit Herstrøm; Flemming Jensen; Haiyan Ou

doi:10.1016/j.mssp.2018.10.028

An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

Li Lin, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Mengning Liang, Zhiqiang Liu, Xiaoyan Yi, Philipp Schuh, Peter Wellmann, Berit Herstrøm, Flemming Jensen, Haiyan Ou^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped ﬂuorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.

Original language	English
Journal	Materials Science in Semiconductor Processing
Volume	91
Pages (from-to)	9-12
ISSN	1369-8001
DOIs	https://doi.org/10.1016/j.mssp.2018.10.028
Publication status	Published - 2019

Keywords

Hydrogen silsesquioxane bonding
Fluorescent-silicon carbide
Warm white light-emitting diodes

Access to Document

10.1016/j.mssp.2018.10.028

MSSP 2018Final published version, 965 KBLicence: CC BY-NC-ND

Cite this

Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z., Yi, X., Schuh, P., Wellmann, P., Herstrøm, B., Jensen, F., & Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://doi.org/10.1016/j.mssp.2018.10.028

Lin, Li ; Ou, Yiyu ; Jokubavicius, Valdas ; Syväjärvi, Mikael ; Liang, Mengning ; Liu, Zhiqiang ; Yi, Xiaoyan ; Schuh, Philipp ; Wellmann, Peter ; Herstrøm, Berit ; Jensen, Flemming ; Ou, Haiyan. / An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 91. pp. 9-12.

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title = "An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications",

abstract = "We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped ﬂuorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.",

keywords = "Hydrogen silsesquioxane bonding, Fluorescent-silicon carbide, Warm white light-emitting diodes",

author = "Li Lin and Yiyu Ou and Valdas Jokubavicius and Mikael Syv{\"a}j{\"a}rvi and Mengning Liang and Zhiqiang Liu and Xiaoyan Yi and Philipp Schuh and Peter Wellmann and Berit Herstr{\o}m and Flemming Jensen and Haiyan Ou",

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doi = "10.1016/j.mssp.2018.10.028",

language = "English",

volume = "91",

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An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. / Lin, Li; Ou, Yiyu; Jokubavicius, Valdas; Syväjärvi, Mikael; Liang, Mengning; Liu, Zhiqiang; Yi, Xiaoyan; Schuh, Philipp; Wellmann, Peter; Herstrøm, Berit ; Jensen, Flemming ; Ou, Haiyan.

In: Materials Science in Semiconductor Processing, Vol. 91, 2019, p. 9-12.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

AU - Lin, Li

AU - Ou, Yiyu

AU - Jokubavicius, Valdas

AU - Syväjärvi, Mikael

AU - Liang, Mengning

AU - Liu, Zhiqiang

AU - Yi, Xiaoyan

AU - Schuh, Philipp

AU - Wellmann, Peter

AU - Herstrøm, Berit

AU - Jensen, Flemming

AU - Ou, Haiyan

PY - 2019

Y1 - 2019

N2 - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped ﬂuorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.

AB - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped ﬂuorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.

KW - Hydrogen silsesquioxane bonding

KW - Fluorescent-silicon carbide

KW - Warm white light-emitting diodes

U2 - 10.1016/j.mssp.2018.10.028

DO - 10.1016/j.mssp.2018.10.028

M3 - Journal article

VL - 91

SP - 9

EP - 12

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -