An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

Li Lin, Yiyu Ou, Valdas Jokubavicius, Mikael Syväjärvi, Mengning Liang, Zhiqiang Liu, Xiaoyan Yi, Philipp Schuh, Peter Wellmann, Berit Herstrøm, Flemming Jensen, Haiyan Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.
Original languageEnglish
JournalMaterials Science in Semiconductor Processing
Volume91
Pages (from-to)9-12
ISSN1369-8001
DOIs
Publication statusPublished - 2019

Keywords

  • Hydrogen silsesquioxane bonding
  • Fluorescent-silicon carbide
  • Warm white light-emitting diodes

Cite this

Lin, Li ; Ou, Yiyu ; Jokubavicius, Valdas ; Syväjärvi, Mikael ; Liang, Mengning ; Liu, Zhiqiang ; Yi, Xiaoyan ; Schuh, Philipp ; Wellmann, Peter ; Herstrøm, Berit ; Jensen, Flemming ; Ou, Haiyan. / An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. In: Materials Science in Semiconductor Processing. 2019 ; Vol. 91. pp. 9-12.
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title = "An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications",
abstract = "We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.",
keywords = "Hydrogen silsesquioxane bonding, Fluorescent-silicon carbide, Warm white light-emitting diodes",
author = "Li Lin and Yiyu Ou and Valdas Jokubavicius and Mikael Syv{\"a}j{\"a}rvi and Mengning Liang and Zhiqiang Liu and Xiaoyan Yi and Philipp Schuh and Peter Wellmann and Berit Herstr{\o}m and Flemming Jensen and Haiyan Ou",
year = "2019",
doi = "10.1016/j.mssp.2018.10.028",
language = "English",
volume = "91",
pages = "9--12",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Pergamon Press",

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An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. / Lin, Li; Ou, Yiyu; Jokubavicius, Valdas; Syväjärvi, Mikael; Liang, Mengning; Liu, Zhiqiang; Yi, Xiaoyan; Schuh, Philipp; Wellmann, Peter; Herstrøm, Berit; Jensen, Flemming; Ou, Haiyan.

In: Materials Science in Semiconductor Processing, Vol. 91, 2019, p. 9-12.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

AU - Lin, Li

AU - Ou, Yiyu

AU - Jokubavicius, Valdas

AU - Syväjärvi, Mikael

AU - Liang, Mengning

AU - Liu, Zhiqiang

AU - Yi, Xiaoyan

AU - Schuh, Philipp

AU - Wellmann, Peter

AU - Herstrøm, Berit

AU - Jensen, Flemming

AU - Ou, Haiyan

PY - 2019

Y1 - 2019

N2 - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.

AB - We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30mA.

KW - Hydrogen silsesquioxane bonding

KW - Fluorescent-silicon carbide

KW - Warm white light-emitting diodes

U2 - 10.1016/j.mssp.2018.10.028

DO - 10.1016/j.mssp.2018.10.028

M3 - Journal article

VL - 91

SP - 9

EP - 12

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -