An accurate and simple large signal model of HEMT

Qing Liu

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Abstract

A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid pulse inverter with rise and fall times of 20 ps and 29 ps at 5 Gb/s, respectively, has been built. The accuracy of the model has been verified by obtaining good agreement between the measured and simulated waveforms of the inverter
Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
VolumeVolume 1
PublisherIEEE
Publication date1989
Pages463-466
DOIs
Publication statusPublished - 1989
Event1989 IEEE MTT-S International Microwave Symposium Digest - Long Beach, CA, United States
Duration: 13 Jun 198915 Jun 1989
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=825

Conference

Conference1989 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CityLong Beach, CA
Period13/06/198915/06/1989
Internet address

Bibliographical note

Copyright 1989 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Cite this

Liu, Q. (1989). An accurate and simple large signal model of HEMT. In IEEE MTT-S International Microwave Symposium Digest (Vol. Volume 1, pp. 463-466). IEEE. https://doi.org/10.1109/MWSYM.1989.38766