TY - JOUR
T1 - All-Electrical Detection of the Spin-Charge Conversion in Nanodevices Based on SrTiO3 2-D Electron Gases
AU - Gallego, Fernando
AU - Trier, Felix
AU - Mallik, Srijani
AU - Bréhin, Julien
AU - Varotto, Sara
AU - Moreno Vicente-Arche, Luis
AU - Gosavy, Tanay
AU - Lin, Chia-Ching
AU - Coudevylle, Jean René
AU - Iglesias, Lucía
AU - Casanova, Fèlix
AU - Young, Ian
AU - Vila, Laurent
AU - Attané, Jean Philippe
AU - Bibes, Manuel
PY - 2023
Y1 - 2023
N2 - The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin-charge conversion signal is optimized by applying back-gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond-CMOS computing architectures.
AB - The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin-charge conversion signal is optimized by applying back-gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond-CMOS computing architectures.
KW - 2D electron gases
KW - MESO devices
KW - Oxides
KW - Spin-orbit coupling
U2 - 10.1002/adfm.202307474
DO - 10.1002/adfm.202307474
M3 - Journal article
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -