AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates: Paper

G E Cirlin; R R Reznik; I V Shtrom; A I Khrebtov; I P Soshnikov; S A Kukushkin; Lorenzo Leandro; Takeshi Kasama; Nika Akopian

doi:10.1088/1361-6463/aa9169

AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates: Paper

G E Cirlin, R R Reznik, I V Shtrom, A I Khrebtov, I P Soshnikov, S A Kukushkin, Lorenzo Leandro, Takeshi Kasama, Nika Akopian

St. Petersburg Academic University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.

Original language	English
Article number	484003
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	48
Number of pages	6
ISSN	0022-3727
DOIs	https://doi.org/10.1088/1361-6463/aa9169
Publication status	Published - 2017

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title = "AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates: Paper",

abstract = " The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform. ",

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T1 - AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

T2 - Paper

AU - Cirlin, G E

AU - Reznik, R R

AU - Shtrom, I V

AU - Khrebtov, A I

AU - Soshnikov, I P

AU - Kukushkin, S A

AU - Leandro, Lorenzo

AU - Kasama, Takeshi

AU - Akopian, Nika

PY - 2017

Y1 - 2017

N2 - The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.

AB - The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.

U2 - 10.1088/1361-6463/aa9169

DO - 10.1088/1361-6463/aa9169

M3 - Journal article

SN - 0022-3727

VL - 50

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 48

M1 - 484003

ER -

AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates: Paper

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