TY - JOUR
T1 - Air Stable, High Efficiency, Pt‐Based Halide Perovskite Solar Cells with Long Carrier Lifetimes
AU - Schwartz, Dakota
AU - Murshed, Rubaiya
AU - Larson, Harry
AU - Usprung, Benedikt
AU - Soltanmohamad, Sina
AU - Pandey, Ramesh
AU - Barnard, Edward S.
AU - Rockett, Angus
AU - Hartmann, Thomas
AU - Castelli, Ivano Eligio
AU - Bansal, Shubhra
PY - 2020
Y1 - 2020
N2 - The search for Pb‐free perovskite materials continues with limited success to find a suitable replacement for Pb with outstanding optoelectronic properties. Here we report Pb‐free inorganic halide perovskite Cs2PtI6 with excellent absorption coefficient, long minority carrier lifetime and optical bandgap of 1.4 eV. Atmospheric precursor based solution processing results in high quality Cs2PtI6 with absorption coefficient of for photon energies > 1.5 eV and high minority carrier lifetimes of > 2 μs indicating low defect density in the material. Superstrate n‐i‐p solar cells processed with the structure F:SnO2/CdS/Cs2PtI6/carbon/Cu show promising device efficiency of 13.88%. These planar devices processed under atmospheric conditions show low Voc deficit (< 0.3 V) without any hysteresis in forward and reverse scans indicating low trap densities. Pt offers an excellent model system for replacement of Pb due to high atomic number, oxidation resistance and stability. Cs2PtI6 is an atmospherically stable phase under AM1.5G and 65 °C upto 1000 hours.
AB - The search for Pb‐free perovskite materials continues with limited success to find a suitable replacement for Pb with outstanding optoelectronic properties. Here we report Pb‐free inorganic halide perovskite Cs2PtI6 with excellent absorption coefficient, long minority carrier lifetime and optical bandgap of 1.4 eV. Atmospheric precursor based solution processing results in high quality Cs2PtI6 with absorption coefficient of for photon energies > 1.5 eV and high minority carrier lifetimes of > 2 μs indicating low defect density in the material. Superstrate n‐i‐p solar cells processed with the structure F:SnO2/CdS/Cs2PtI6/carbon/Cu show promising device efficiency of 13.88%. These planar devices processed under atmospheric conditions show low Voc deficit (< 0.3 V) without any hysteresis in forward and reverse scans indicating low trap densities. Pt offers an excellent model system for replacement of Pb due to high atomic number, oxidation resistance and stability. Cs2PtI6 is an atmospherically stable phase under AM1.5G and 65 °C upto 1000 hours.
U2 - 10.1002/pssr.202000182
DO - 10.1002/pssr.202000182
M3 - Journal article
SN - 1862-6254
VL - 14
JO - Physica Status Solidi. Rapid Research Letters
JF - Physica Status Solidi. Rapid Research Letters
IS - 8
M1 - 2000182
ER -