Air-stable π-conjugated amorphous copolymer field-effect transistors with high mobility of 0.3 cm2/Vs

S. Georgakopoulos, Y. Gu, Martin Meedom Nielsen, M. Shkunov

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Abstract

We have fabricated organic bottom-contact top-gate field-effect transistors with an indenofluorene-phenanthrene co-polymer semiconductor, exhibiting ON/OFF ratio of 10(7) and uncommonly high mobility for an amorphous conjugated polymer of up to 0.3 cm(2)/Vs. Lack of crystallinity in this material is indicated by atomic force microscopy, grazing incidence wide angle X-ray scattering, and differential scanning calorimetry data. Nevertheless, fitting transistor data to the Gaussian disorder model gives low energetic disorder of sigma = 48 meV and high prefactor mobility mu(0) = 0.67 cm(2)/Vs. The measured transistor mobility is also exceptionally stable in ambient conditions, decreasing only by approximately 15% over two months. (C) 2012 American Institute of Physics
Original languageEnglish
JournalApplied Physics Letters
Volume101
Issue number21
Pages (from-to)213305
Number of pages5
ISSN0003-6951
DOIs
Publication statusPublished - 2012

Keywords

  • Physics
  • Thin-film transistors
  • Charge-transport
  • Semiconducting polymers
  • Gate insulators
  • Pentacene
  • Stability

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